Abstract:In this work, a thin film transistor (TFT) with Zr-doped aluminum-zinc-tin oxide (Zr-AZTO) semiconductor as active layer was investigated. The Zr-AZTO thin films were co-sputtered by ZrO2 and AZTO targets (RF-Sputter) in Ar, and annealed at 350 degrees C in air atmosphere. With the discharge power of AZTO increasing from 100 W to 120 W, the content of Zr element decreases from 0.63 +/- 0.01 at.% to 0.34 +/- 0.01 at.%, and the oxygen vacancy decreases from (19.0 +/- 0.1)% to (17.3 +/- 0.8)%. The results of Zr-AZTO thin film show that the main factor is the co-sputter power of ZrO2 target. With the co-sputter power of ZrO2 increasing from 15 W to 45 W, the content of Zr element increases from 0.63 +/- 0.01 at.% to 2.79 +/- 0.01 at.%, the content of oxygen vacancy decreases from (19.0 +/- 0.1)% to (14.1 +/- 0.1)%, Eg increases from 2.76 eV to 2.86 eV, and the root mean square (RMS) roughness firstly decreases from 0.402 nm to 0.387 nm and then increases to 0.490 nm. The Micro Wave Photo Conductivity Decay (mu-PCD, LTA-1620SP) was used to measure the quality of Zr-AZTO thin film and the mean peak and D value decreases from 139.3 mV to 80.9 mV and from 1.54 to 0.77 as the co-sputter power of ZrO2 increases from 15 W to 45 W, which means it has highest localized states and defects in high ZrO2 co-sputter power. The devices prepared at 15 W (ZrO2)/100 W (AZTO) co-sputter show a best performance, with a mu(sat) of 8.0 +/- 0.6 cm(2)/(V.S), an Ion/loff of (2.01 +/- 0.34) x 10(6), and a SS of 0.18 +/- 0.03 V/dec. The device of Sample B has a 0.5 V negative shift under -20 V NBS and 9.6 V positive shift under 20 V PBS.

Study on the Electrical Properties of Zno Thin Film Transistors Using Pyrochlore Bi1.5zn(1+Y)Nb1.5o(7+Y) Gate Insulators Fabricated by Rf Sputtering

Effect of Sputtering Power on Properties of ZnO Thin Film Transistors with Bi1.5Zn1.0Nb1.5O7 Gate Insulator

Effect of Excess Bi2o3 on Structure and Performance of Zno-Based Thin Film Transistors

Effect of Annealing Temperature of Bi1.5Zn1.0Nb1.5O7gate Insulator on Performance of ZnO Based Thin Film Transistors

Effects of Substrate Temperature on ZnO-TFT Based on Bi1.5 Zn1.0 Nb1.5O7 Insulating Layer

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Effect of Excess ZnO on Structure and Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Thin Films Grown at Room Temperature by RF Magnetron Sputtering

Structures and Dielectric Properties of Pyrochlore Bismuth Zinc Niobate Thin Films with Zinc Compensation

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

The Performance Of Zr-Doped Al-Zn-Sn-O Thin Film Transistor Prepared By Co-Sputtering

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability

Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition

High-Performance and Flexible Neodymium- Doped Oxide Semiconductor Thin-Film Transistors with Copper Alloy Bottom-Gate Electrode

Fabrication and Comparative Study of Top-Gate and Bottom-Gate ZnO–TFTs with Various Insulator Layers

Effect of excess Bi2O3 on structures and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films deposited at room temperature by RF magnetron sputtering

Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn-Doped BiFeO 3 Thin Films