Charge pump circuit based on the sharing technique

Dong WU,Liyang PAN,Zhigang DUAN,Jun ZHU
DOI: https://doi.org/10.3321/j.issn:1000-0054.2006.04.022
2006-01-01
Abstract:A charge pump circuit based on the sharing technique was developed which reduces the chip area while improving the gain. The circuit can generate two negative high voltages by changing the serial/parallel connection between the two sub-charge pumps. The technique not only gives high quality voltage signals, but also reduces the chip size of the charge pumps by 50%. An additional circuit was designed to dynamically control the substrate bias of the PMOS transistors. Simulation results show that the charge pump gain is-increased by 14%. This charge pump design is suitable for flash memory circuits which use two different negative high voltages for program and erase operations.
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