Controlled Synthesis of ZnO Nanowires in a Wide Temperature Range by CVD Method

MA Ke,HE Yong-ning,ZHANG Song-chang,LIU Wei-hua
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2012.04.009
2012-01-01
Abstract:ZnO nanowires were controlled synthesized based on CVD mechanism using the thermal evaporation method in a wide temperature range.Scanning electron microscopy(SEM) has been used to characterize the morphology of ZnO nanowires.In that way,the influence of reaction temperature and the heating time on the morphology of the ZnO nanostructure were characterized by photoconductive UV detector.The photoelectric property of the ZnO nanowires were studied.The research work demonstrates that,using CVD method,ZnO nanowires could synthesize in a wide reaction temperature range above 419.5℃ under the atmospheric pressure,rather than at a very specific temperature point.The key solution for realizing the controlled growth in the wide temperature range is to optimize and matchup the heating time and reaction temperature.The measured photocurrent of the device under UV illumination shows the outstanding optoelectronic response properties of the ZnO nanowires.
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