Study of Optical and Electrical Properties of ZnO Thin Films Grown by Plasma-enhanced Molecular Beam Epitaxy

梁红伟,吕有明,申德振,颜建锋,刘益春,李炳辉,赵东旭,张吉英,范希武
DOI: https://doi.org/10.3969/j.issn.1000-985x.2003.06.008
2003-01-01
Abstract:ZnO thin films were grown on c-plane Al2O3 substrates by plasma-enhanced molecular beam epitaxy (P-MBE). The dependence of the quality of the obtained films on the growth temperature was investigated. When the growth temperature is in the range of 350-650℃, the crystal grain sizes ranging from 20nm to 200nm are obtained by the measurement of atomic force microscope (AFM). X-ray rocking curves (XRC) show that the full width at half maximum (FWHM) decreases from 0.88°to 0.29°. At room temperature (RT), the photoluminescence (PL) spectra exhibit an intense ultraviolet (UV) emission and a weak visible emission related to the oxygen vacancy. With the growth temperature increasing, the relative intensity of the visible emission decreases and carrier concentration is reduced gradually. For the samples grown at 650℃, the PL intensity ratio of the UV emission to visible emission is 82.7 and the carrier concentration is 7.66×1016/cm3. These results indicate that the stoichiometric proportion of zinc and oxygen atoms is improved with the increase of temperature and high quality ZnO thin films are obtained at high growth temperature. In addition, the origin of the UV emission observed at RT is discussed by the measurements of varying temperature PL spectra and is considered to be from free exciton emission. For the samples grown at different temperatures, shift of UV emission peaks is attributed to the effect of the quantum confinement due to different crystal grain sizes.
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