TiN Membrane for MEMS Applications

YANG Mei,SHU Qiong,CHEN Jing
DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.036
2006-01-01
Abstract:TiN membrane for MEMS applications is studied. The membrane is deposited by reactive RF sputtering, and the influence of critical process parameters, such as ration argon gas to nitrogen gas、gas pressure is investigated. The affection of different annealing process conditions on TiN film stress is also researched, low temperature annealing of film can be realized. Furthermore, the etching and anti-erosion characteristics of TiN film are investigated. Recording to the wet etching results of TiN film, TiN is anti-erosion in room temperature. Etch rate of SiC film by wet and dry etch techniques are measured. It is ready for MEMS applications.
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