Growth principle and properties of semiconductor quantum dot

王亚东,黄靖云,王龙成,叶志镇

DOI: https://doi.org/10.3969/j.issn.1003-353X.2000.06.006

2000-01-01

Abstract:The primary principle of self-organized growth about semiconductor quantum dots is presented. Some properties, such as exciton binding energy, carrier dynamics, arrangement, and optical properties are also included.

What problem does this paper attempt to address?

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Zhang Lei,Ye Hui,Huangfu Yourui,Zhan Wenbo,Liu Xu

DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.06.21

2011-01-01

Abstract:The high density germanium quantum dots(QDs) were deposited by vacuum evaporation in a molecular beam epitaxy(MBE) reactor,on the Si substrates covered with ultra thin SiO2buffer layers.The impacts of the growth conditions on microstructures and properties of the Ge QDs were studied with scanning electron microscopy,energy dispersive spectroscopy,reflection high energy electron diffraction,and Raman spectroscopy.The results show that the Ge quantum-dots with a density of 1011 cm-2 were fabricated,and that the annealing relaxed the residue strains in the quantum-dots.The growth mechanisms and advantages over Stranski Krastanow(S-K) technique were also tentatively discussed.
Semiconductor Quantum Dots: Synthesis, Properties and Applications

Donghai Feng,Guofeng Zhang,Yang Li

DOI: https://doi.org/10.3390/nano14221825

2024-01-01

Abstract:Semiconductor nanoparticles of sizes smaller than exciton Bohr diameters undergo quantum confinement and are called quantum dots (QDs), which exhibit size-dependent physicochemical properties [...]
Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

ZG Xie,F Wei,H Cao,GS Solomon

DOI: https://doi.org/10.1063/1.1994312

2005-01-01

Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.
Luminescent Characteristics and Applied Research Progress of II-VI Semiconductor Quantum Dots

Zhou Qing-cheng

Abstract:Semiconductor quantum dots have great practical value because of their unique optical characteristics. In this paper, the luminescent principle and properties of semiconductor quantum dots were introduced combining with our work about this aspect. In the experiments, it was found that the luminescent stability of the core/shell structural semiconductor quantum dots CdSe/CdS was enhanced in comparison with the bare CdSe quantum dots, and the absorption and emission spectra of the CdSe/CdS quantum dots shifted to the longer wavelength. It was also observed that the different sized semiconductor quantum dots showed different colors, and the absorption and emission spectra shifted to the longer wavelength as the size of the quantum dots increased. Particularly, the progress and applications of semiconductor quantum dots in optoelectronic devices and biomedicine were reviewed, and the perspective of the development was viewed.

Materials Science,Physics
Research progress of electronic properties of self-assembled semiconductor quantum dots

Jie Sun,Peng Jin,Zhanguo Wang

DOI: https://doi.org/10.48550/arXiv.0712.1000

2007-12-07

Abstract:Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of that material and an analysis of problems and perspectives.

Mesoscale and Nanoscale Physics
Research Progress on the Growth of Ge/Si Quantum Dot

时文华,李传波,王启明

DOI: https://doi.org/10.3969/j.issn.1001-5868.2004.04.001

2004-01-01

Abstract:In order to put Ge/Si quantum dot grown in SK(Stranski-Krastanov) mode into use, two problems must be solved, i.e., the position of any dot can be precisely controlled and the size of dot must be reduced. Research progress on these two problems are reviewed with focus on the growth of Ge quantum dot on patterned substrate, ordering growth of Ge island on vicinal substrate by Si surface self-organization and growth of the island induced by impurity on the substrate's surface.
QUANTUM DOT OPTO-ELECTRONIC DEVICES

P. Bhattacharya,S. Ghosh,A.D. Stiff-Roberts

DOI: https://doi.org/10.1146/annurev.matsci.34.040203.111535

IF: 9.7

2004-08-04

Annual Review of Materials Research

Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

materials science, multidisciplinary
Device Applications of Semiconductor Quantum Dot

WANG Ya-dong,HUANG Jing-yun,YE Zhi-zhen

DOI: https://doi.org/10.3969/j.issn.1001-5868.2000.05.002

2000-01-01

Abstract:There is currently a major ongoing research effort across the world to grow and characterize semiconductor quantum dots(QDs). Defect-free QDs have be en successfully grown under what is known as the Stranski-Krastanov(S-K) grown m ode.Due to their stronger quantum-confined effects,quantum dot structures in o p toelectronic and electronic devices are expected to have superior device perform ance levels than quantum well structures.This paper introduces the applications of the quantum dots in optoelectronic and electronic devices including such opt oelectronic and electronic devices as single-electron transistors,lasers,and inf rared photodetectors.
Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

谭华 Tan Hua,倪朕伊 Ni Zhenyi,皮孝东 Pi Xiaodong,杨德仁 Yang Deren

DOI: https://doi.org/10.3788/LOP54.030006

2017-01-01

Laser & Optoelectronics Progress

Abstract:Silicon quantum dots (Si QDs) are usually smaller than 10 nm. They have drawn much attention from researchers because of their novel electronic and optical properties caused by quantum confinement effect and surface effect, which are different from those of bulk silicon materials. In recent years, Si QDs have been applied in the field of optoelectronics because of their novel electronic and optical properties, and a series of research progress have been achieved. The electronic and optical properties of Si QDs are overviewed. The use of Si QDs in optoelectronic devices such as light-emitting diodes, solar cells and photodetectors is introduced in detail. The performance of different types of Si QDs in optoelectronic devices is analyzed as well. It is believed that if continuous efforts in the research on Si QDs are made, Si QDs will play a crucial role in the innovation of optoelectronic devices in the future.
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

ZHAN Jing,CHEN Xi,FU Fei-ya,YANG Kang,HU Yi-xiang,CHU Hai-bo,LIU Niu,JIANG Jian-jun

DOI: https://doi.org/10.3321/j.issn:1001-9731.2006.10.018

2006-01-01

Abstract:The paper indicates a simulation of the MBE growth of self-assembled InAs quantum dots on ideal GaAs substrate using an Monte Carlo method,which presents the whole process of QD growth from 2D to 3D.Stress is fully considered by using exponential function model,which makes the results more reliable.A series of quantum dots growth pictures obtained by altering the temperature and the interval time between growth are discussed.It is found that moderate temperature and adequate migrating time conduce to growing quantum dots of high quality.
Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Yingjie Ma,Shufan Huang,Cheng Zeng,Tianyuan Zhou,Zhenyang Zhong,Tong Zhou,Yongliang Fan,Xinju Yang,Jinsong Xia,Zuimin Jiang

DOI: https://doi.org/10.1039/c3nr04114j

IF: 6.7

2014-01-01

Nanoscale

Abstract:Fabrication of semiconductor single and double quantum dot (QD) nanostructures is of utmost importance due to their promising applications in the study of advanced cavity quantum electrodynamics, quantum optics and solid-state spin qubits. We present results about the controllable growth of self-assembled single and double SiGe QD arrays with an ultra-low areal density of 1 × 10(7) cm(-2) on nanohole-patterned Si substrates via molecular beam epitaxy. The two dots in a double QD (DQD) aligned along the elongation direction of the nanoholes and show unsymmetrical features in both size and composition due to the asymmetric nanohole profiles after Si buffer layer growth. The interdot spacing between the two dots in a DQD could well be adjusted by changing the elongation ratio of nanoholes. Moreover, whether a single or a double QD formed in a given nanohole was found to be determined by the growth temperature of the Si buffer layer, the reason of which is given by the calculation of the surface chemical potential around the nanoholes after the buffer layer growth.
Atomic Ordering in Self-Assembled Epitaxial Ii-Vi and Iv-Vi Compound Semiconductor Quantum Dot Systems

Möck Peter,Pierz Klaus,Topuria Teya,Browning Nigel D.,Wu Huizhen,McCann Patrick J.

DOI: https://doi.org/10.1557/proc-749-w13.5

2011-01-01

Abstract:Transmission electron microcopy (TEM) in both the parallel illumination and scanning probe mode revealed atomically ordered entities within a 5 to 250 nm range in a IV-VI and a II–VI compound semiconductor quantum dot (QD) system. While the II–VI system was a nominal [001] CdSe/(Mn0.1Zn0.9)Se multilayer structure with the QDs embedded, the IV-VI system nominally consisted of [111] PbSe islands. The comparison of photoluminescence (PL) spectra from the CdSe/(Mn0.1Zn0.9)Se structure with those of a reference structure, that was grown to the same nominal specification under otherwise identical conditions except that no Mn was incorporated into the cladding layers, revealed for the former sample two peaks at approximately 2 and 2.1 eV. We tentatively attribute these two PL peaks to two groups of atomically ordered entities.
Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Yizheng Jin

DOI: https://doi.org/10.1117/12.2566976

2021-01-01

Abstract:Quantum dots (QDs) are a unique class of emitters with size-tunable emission wavelengths, saturated emission colors, near-unity luminance efficiency, inherent photo- and thermal- stability and excellent solution processability. In the past few years, efficiency and lifetime of quantum-dot light-emitting diodes (QLEDs) achieved tremendous progress. These encouraging facts foreshadow the commercialization of QLEDs, which promises an unprecedented generation of cost-effective, large-area, energy-saving, wide-color-gamut, ultra-thin and flexible displays. Here we review our activities associated with QLEDs, including exciton-generation mechanisms, material chemistry of charge-transporting layers and device engineering.
Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Yunhai Li,Huabing Shu,Shudong Wang,Jinlan Wang

DOI: https://doi.org/10.1021/jp506969r

2015-01-01

Abstract:The electronic structure and optical properties of hexagonal armchair and zigzag-edged graphene quantum dots (GQDs) are investigated within the framework of many-body perturbation theory. Many-body effects are significant due to quantum confinement and reduced screening. The quasi-particle corrections and exciton binding energies can be several eV, much larger than those of other carbon allotropes with higher dimensionality. All the GQDs show similar absorption spectra when electronhole interaction is included, with a prominent peak emerging below the absorption onset of the noninteracting spectrum. This peak is contributed by a pair of double-degenerate excited states originating from the transitions between degenerate frontier orbitals. The spin singlet-triplet splitting is closely related to the electronhole overlap, which can be approximately measured by the overlap between frontier orbitals involved in the optical transitions. The strong many-body effects in GQDs should be of great importance in optoelectronic applications.
Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Sung-Min Jung,Tae Hoon Lee,Sang Yun Bang,Soo Deok Han,Dong-Wook Shin,Sanghyo Lee,Hyung Woo Choi,Yo-Han Suh,Xiang-Bing Fan,Jeong-Wan Jo,Shijie Zhan,Jiajie Yang,Chatura Samarakoon,Yoonwoo Kim,Luigi G. Occhipinti,Gehan Amaratunga,Jong Min Kim

DOI: https://doi.org/10.1038/s41524-021-00591-9

IF: 12.256

2021-01-01

npj Computational Materials

Abstract:Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.
Optical and Electrical Characterizations of Znse Self-Organized Quantum Dots Grown by Molecular Beam Epitaxy

LW Lu,ZG Wang,CL Yang,J Wang,ZH Ma,IK Sou,WK Ge

DOI: https://doi.org/10.3321/j.issn:1000-3290.2002.02.020

IF: 0.906

2002-01-01

Acta Physica Sinica

Abstract:Optical and electrical properties of ZnSe self-organized quantum dots were investigated using photoluminescence, capacitance-voltage, and deep level transient Fourier spectroscopy techniques. The temperature dependence of photoluminescence was employed to clarify the mechanism of photoluminescence thermal quenching processes in ZnSe quantum dots. A theoretic fit on considering a two-step quenching processes well explained the experimental data. The apparent carrier concentration profile obtained from capacitance-voltage measurements exhibits an accumulation peak at the depth of about 100nm below the sample surface, which is in good agreement with the location of the quantum dot layer. The electronic ground state of ZnSe quantum dots is determined to be about 0.11 eV below the conduction band of ZnS, which is similar to that obtained by simulating the thermal quenching of ZnSe photoluminescence.
Three-Dimensional Finite-Element Simulations of the Self-Organized Growth of Quantum Dot Superlattices

P Liu,YW Zhang,C Lu

DOI: https://doi.org/10.1103/physrevb.68.195314

2003-01-01

Abstract:Controlling the self-organized growth of quantum dot superlattices to achieve perfect dot arrays has been studied through three-dimensional computer simulations. A growth window has been identified in which the self-organized quantum dots are arranged in a body-centered tetragonal superlattice with a fixed dot spacing irrespective of growth rates. However, the size of the quantum dots can be tuned through the change of growth rate. Surprisingly, the ordering of the self-organized quantum dot superlattices is controlled by the ordering of strain energy density maxima, which is in contrast with the previous understanding that the ordering of the self-organized quantum dot superlattice is controlled by the ordering of the strain energy density minima. This provides a guideline for the fabrication of quantum dot superlattices.
Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Lai Wang,Lei Wang,Jiadong Yu,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.1021/acsami.8b16767

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Stranski-Krastanov (SK) growth mode is widely adopted for the self-assembled growth of semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential and a thick wetting layer (WL) is formed beneath the QD layer. In this paper, we report the metal organic vapor phase epitaxy of green InGaN QDs, employing a growth interruption method to decrease the critical thickness and improve the morphology of QDs. The QDs exhibit similar photoluminescence properties with those grown by conventional SK mode, implying the existence of a WL. We experimentally verify that the formation of QDs, whether based on the SK mode or the growth interruption method, conforms to the phase separation theory. However, the density of QDs grown by the interruption method exhibits abnormal dependence on the strain when a quantum well (QW) is inserted beneath the QD layer. Furthermore, the underlying QW not only influences the morphology of the QDs but also plays as a reservoir of electrons, which helps enhance the photoluminescence and the electroluminescence of the QDs. The method of QD growth with improved morphology and luminescence by introducing the QW-QD coupled nanostructure is universally applicable to similar material systems. Furthermore, a 550 nm green light-emitting diode (LED) and a 526 nm superluminescent LED based on the nanostructure are demonstrated.
Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Lei Wen,Fangliang Gao,Shuguang Zhang,Guoqiang Li

DOI: https://doi.org/10.1002/smll.201670157

IF: 13.3

2016-01-01

Small

Abstract:On page 4277, G. Li and co-workers aim to promote III-V compound semiconductors and devices for a broad range of applications with various technologies. The growth process of InAs quantum dots on GaAs (511)A substrates is systematically studied. By carefully controlling the competition between growth thermal-dynamics and kinetics, InAs quantum dots with high size uniformity are prepared, which are highly desirable for the fabrication of high-efficiency solar cells.

Growth principle and properties of semiconductor quantum dot

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Luminescent Characteristics and Applied Research Progress of II-VI Semiconductor Quantum Dots

Research progress of electronic properties of self-assembled semiconductor quantum dots

Research Progress on the Growth of Ge/Si Quantum Dot

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Device Applications of Semiconductor Quantum Dot

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Optical properties of Ge/Si quantum dot superlattices

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Atomic Ordering in Self-Assembled Epitaxial Ii-Vi and Iv-Vi Compound Semiconductor Quantum Dot Systems

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Optical and Electrical Characterizations of Znse Self-Organized Quantum Dots Grown by Molecular Beam Epitaxy

Three-Dimensional Finite-Element Simulations of the Self-Organized Growth of Quantum Dot Superlattices

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)