Abstract:This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, <inline-formula> <tex-math notation="LaTeX">$\text {AR}\approx 80$ </tex-math></inline-formula> for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-trench etch, and AR > 20 for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-hole etch), with straight sidewalls across a wide range of feature sizes. The challenges of making such structures are overcome by continuously ramping critical parameters of the Bosch DRIE process throughout the process, including the 380-kHz bias power during etch step, the etch/passivation step duration, and the chamber pressure. The masking material capable of enduring the long DRIE process is also discussed; 10-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> wide trenches are etched to a depth of >750-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and >1000-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, respectively, in 1-mm-thick silicon wafers with straight sidewall profiles and flat trench bottoms. Deeper trenches are expected to be etched beyond a 1-mm thick wafer with thicker and/or higher selectivity masking materials. We have also demonstrated etching of circular holes of diameters as small as 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> to a depth of >500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, and potentially with 10–15 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> diameter holes. This advanced DRIE process offers opportunities for applications ranging from through-silicon via in 3-D CMOS integration to emerging micro- and meso-scale microelectromechanical system applications that demand ultra-deep and UHAR DRIE. [2017–0298]

Deep O2RIE PMMA Micro-structures

Pmma Deep Etching By O2rie

&Lt;title>pmma Microstructure Deep-Etch Process</title>

Pmma Microstructures Deep Etch Process

High Aspect Ratio Pmma Micro-Structures Fabricated by Rie

Reactive ion beam etching for diffractive optical elements

Microstructures of PMMA Sheet Fabricated by RIE

Combined AFM Nano-Machining and Reactive Ion Etching to Fabricate High Aspect Ratio Structures.

Study on Deep Reactive Ion Etching of Commerical Polymethlmethacrylate Film

Deep Reactive Ion Etching of Pmma

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Fabrication of Microstructures by Rear-Side Picosecond Laser Irradiation of Two-Layer PMMA

Deep Reactive Ion Etching As A Tool for Nanostructure Fabrication

Ultra high aspect-ratio and thick deep silicon etching (UDRIE)

Fabrication of Micro/Nano Dual-Scale Structures by Improved Deep Reactive Ion Etching

A Triple-Layer Protection Process for High-Aspect-Ratio Silicon Micromachining by Drie of Soi Substrates

Uv Assistant Micro Injection Molding Process For High Aspect Ratio Structures-Equipment Design And Construction

A Model of Deep-RIE in MEMS Fabrications

Using Silicon Molds for Ultrasonic Embossing on Polymethyl Methacrylate (PMMA) Substrates