Effects of Thermal Annealing on Properties of SnO2 Nanowires

Fuping LI,Zhixiang YE,Xiaohong JI
DOI: https://doi.org/10.16818/j.issn1001-5868.2015.03.020
2015-01-01
Abstract:Tin oxide(SnO2)nanowires were synthesized on silicon substrate using chemical vapor deposition method.Scanning electron microscopy,X-ray diffraction and Raman spectrum analysis reveal that the as-synthesized SnO2 nanowires exhibit single crystalline in tetragonal rutile structure.Photoluminescence spectra of SnO2 nanowires show a strong emission peaked at576 nm. However,the 576 nm emission gradually decreases with the increase of oxygen concentration during the thermal annealing, indicating the oxygen-related emission.Furthermore,the field emission properties of SnO2 nanowires get enhanced after annealing.The lowest turn-on and threshold field are 4.6and 6.2V/μm,respectively.
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