Abstract:Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well. It was found that ITZO TFT with annealing temperature of 300 °C exhibits excellent electrical performance with a high saturation field-effect mobility (μ sat) of 27.4 cm2 V-1 s-1, a low threshold voltage (V th) of -0.64 V, a small subthreshold swing (SS) value of 0.23 V per decade, and the high on-off current ratio (I on/I off) of 1.8 × 107. In addition, it also shows good output curves including gate control capabilities and good electrode contact as well as extreme atmospheric stability. As shown by photoluminescence (PL) analysis and X-ray photoelectron spectroscopy (XPS) analysis, the beneficial effects of various annealing temperatures on device performance are attributed to the reorganization of the amorphous network and the control of defect chemistry in the films. The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.

Effect of Annealing Temperature on the Performance of SnO2 Thin Film Transistors Prepared by Spray Pyrolysis

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Influence of Post-Deposition Annealing on the Novel Alloyed SnSxO1-x Semiconductor in P-Type Thin-Film Transistors

Effects of Post Annealing Atmosphere on Low-emission of SnO2: F Thin Films

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Evolution of Electrical Performance of Zno-Based Thin-Film Transistors by Low Temperature Annealing

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Effects of Thermal Annealing on Properties of SnO2 Nanowires

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

The Effect of Different Annealing Temperature on Transparent Conductive SnO2 Thin Film by Solution Process

Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors

Fabrication and Characterization of Thin-Film Transistors with Sno2 Channel by Spray Pyrolysis

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing