Abstract:Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

Rectifying Filamentary Resistive Switching In Ion-Exfoliated Linbo3 Thin Films

Engineering of Self-Rectifying Filamentary Resistive Switching in LiNbO3 Single Crystalline Thin Film Via Strain Doping

Compliance-current-modulated Resistive Switching with Multi-Level Resistance States in Single-Crystalline LiNbO3 Thin Film

Resistive switching properties in polycrystalline LiNbO3 thin films

Resistive Switching Effects of Crystal-Ion-Slicing Fabricated LiNbO<sub>3</sub> Single Crystalline Thin Film on Flexible Polyimide Substrate

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Interface-related resistive switching in BiFeO 3 thin films

Forming-Free Unipolar Resistive Switching in Bife0.95co0.05o3 Films

Unipolar Resistive Switching Behaviors in Amorphous Lutetium Oxide Films

Accelerated Domain Switching Speed in Single-Crystal Linbo3 Thin Films

Evolution of Resistive Switching Polarity in Au/Ar + Bombarded SrTi 0.993 Nb 0.007 O 3 /in Sandwiches

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films

Effects Of The Electroforming Polarity On Bipolar Resistive Switching Characteristics Of Srtio3-Delta Films

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Competition of Resistive-Switching Mechanisms in Nickel-Rich Nickel Oxide Thin Films

Hybrid Aluminum and Indium Conducting Filaments for Nonpolar Resistive Switching of Al/AlOx/indium Tin Oxide Flexible Device

Resistive switching model change induced by electroforming in α-Fe2O3 films

Coexistence Of Unipolar And Bipolar Resistive Switching In Bifeo3 And Bi0.8ca0.2feo3 Films

Controllable Formation of Resistive Switching Filaments by Low-Energy H+ Irradiation in Transition-Metal Oxides