Abstract:Although monolayer black phosphorus (BP), or phosphorene, has been successfully exfoliated and its optical properties have been explored, most of the electrical performance of the devices is demonstrated on few-layer phosphorene and ultrathin BP films. In this paper, we study the channel length scaling of ultrathin BP field-effect transistors (FETs) and discuss a scheme for using various contact metals to change the transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted with the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs), such as MoS2, where the Fermi level is strongly pinned near the conduction band edge at the metal/MoS2 interface. The nature of BP transistors is Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versa by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Black Phosphorus Radio-Frequency Transistors

A Single-Event Transient Induced by a Pulsed Laser in a Silicon—germanium Heterojunction Bipolar Transistor

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Single-Event Effects in SiC Power MOSFET Induced by Pulsed-Laser Two Photon Absorption

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping

Single-event-transient Effect in Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron–hole Bilayer

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Ballistic Transport in Monolayer Black Phosphorus Transistors

A Comprehensive Review of Single Event Transients on Various MOS Devices

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Single Event Transients Induced by Pulse Laser in Ge Pmosfets and Its Supply Voltage Dependence

Recent Developments in Black Phosphorus Transistors

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit