Van der Waals Heteroepitaxial AZO/NiO/AZO/Muscovite (ANA/muscovite) Transparent Flexible Memristor

Van-Qui Le,Thi-Hien Do,José Ramón Durán Retamal,Pao-Wen Shao,Yu-Hong Lai,Wen-Wei Wu,Jr-Hau He,Yu-Lun Chueh,Ying-Hao Chu
DOI: https://doi.org/10.1016/j.nanoen.2018.10.042
IF: 17.6
2019-01-01
Nano Energy
Abstract:Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.
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