Abstract:As an important method to further improve the storage density of resistive memory, multistage resistive switching devices have become an important research direction. However, no stable and controllable multistage resistive switching device has been prepared, and the working mechanism is still unclear. Here, a sandwich-structured device is simply prepared by spin coating, with the work layer is the Bi2FeCrO6 thin film. The device can realize bidirectional controllable multistage resistive switching behavior, the biggest on/off ratio is 104, and it can maintain stability without attenuation at 100 times slow loop and 104 times pulse cycle. The analyzes showed that the charged ions formed by defects in the device migrated under the action of an external electric field lead to the Schottky barrier height reversible changed. Which is the key to cause multistage resistive switching behavior. This work is the first report about the voltage control of bidirectional adjustable multistage resistive switching behavior in the Bi2FeCrO6 thin film. The principle of generation is analyzed, and important ideas and insights are provided for the preparation and treatment of related multistage resistive problems.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16040?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16040</a>.TEM diagram of the device cross section, XRD patterns and the atomic ratio of the BFCO thin film, time sequence diagrams, R–V curve, I–V curves at maximum bias voltage, Au/LNO/Au structure device and I–V curve, absorption spectrum of the BFCO/LNO device and band gap, and XPS patterns (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16040/suppl_file/am0c16040_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Giant Resistive Switching In Mixed Phase Bifeo(3)Via Phase Population Control (Vol 10, Pg 17629, 2018)

Correction: Giant Resistive Switching in Mixed Phase BiFeO3via Phase Population Control.

Giant Resistive Switching In Mixed Phase Bifeo3 Via Phase Population Control

Coexistence Of Unipolar And Bipolar Resistive Switching In Bifeo3 And Bi0.8ca0.2feo3 Films

Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Resistive Switching In Au/Bifeo3/La0.6sr0.4mno3 Heterostructures

Resistive Switching in Unstructured, Polycrystalline Bifeo3 Thin Films with Downscaled Electrodes

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi 2 FeCrO 6 Thin Film

Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching

Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films

Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

Phase-field Simulations of Ferroelectric/ferroelastic Polarization Switching

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Dynamic Resistive Switching in A Three-Terminal Device Based on Phase Separated Manganites

Resistive Switching Induced by Charge Trapping/detrapping: a Unified Mechanism for Colossal Electroresistance in Certain Nb:SrTiO3-based Heterojunctions

Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Ferroelastic Switching for Nanoscale Non-Volatile Magnetoelectric Devices

Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Multistate Resistance Switching in Bi/PMN–PT(111) Heterostructures by Electric and Magnetic Field

Mechanism of Ferroelectric Resistive Switching in Bi0.9la0.1feo3 Thin Films