Abstract:Ferroelectric heterostructures with bi-stable state of polarization are appealing for data storage as well as tunable functionalities such as memristor behavior. While an increasing number of experimental and theoretical studies suggest that polarization persists in ultrathin epitaxial heterostructures approaching just a couple of unit cells, the switching of such polar order is much less well understood, and whether polarization can be reversed in ultrathin ferroelectric heterostructures remains to be answered. Here we fabricate high-quality 7-unit cell thick BaTiO3 (BTO) films on Nb-doped single crystalline SrTiO3 (NSTO) substrate, and demonstrate their apparent yet unambiguously false polarization reversal due to charge injection using comprehensive piezoresponse force microscopy (PFM) studies. The presence of weak polar order consistent with linear piezoelectricity is confirmed at the atomic scale by high resolution integrated differential phase contrast (IDPC) of transmission electron microscopy (TEM) as well as macroscopic second harmonic generation (SHG), while the lack of polarization reversal under the voltage applied is supported by density functional theory calculation showing the persistence of dead layer on the surface. Nevertheless, poling-induced electric conduction differing by two orders of magnitude is observed, demonstrating resistive switching in ferroelectric heterostructure in the absence of polarization reversal, even with weak polar order. Our finding has technological implications on emerging memristor applications with potentially more accessible states than bi-stable polarization modulated mechanism, and raises technical challenges to unambiguously demonstrate polarization switching in ultrathin films at their critical size limit.

Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Effects of interface layers and domain walls on the ferroelectric resistive switching behavior of Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures.

Resistive Switching in Unstructured, Polycrystalline Bifeo3 Thin Films with Downscaled Electrodes

Resistive Switching In Au/Bifeo3/La0.6sr0.4mno3 Heterostructures

Unconventional Resistive Switching Behavior in Ferroelectric Tunnel Junctions.

Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Reproducible Resistive Switching in the Super-Thin Bi2fecro6 Epitaxial Film with Srruo3 Bottom Electrode

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Spatially Resolved Mapping of Ferroelectric Switching Behavior in Self-Assembled Multiferroic Nanostructures: Strain, Size, and Interface Effects

Nonvolatile Resistive Switching Behaviour and the Mechanism in Nd:BiFeO3/Nb:SrTiO3heterostructure

Giant Resistive Switching In Mixed Phase Bifeo3 Via Phase Population Control

Magnetization Switching In The Bife0.9mn0.1o3 Thin Films Modulated By Resistive Switching Process

Domain Dynamics During Ferroelectric Switching

Coexistence Of Unipolar And Bipolar Resistive Switching In Bifeo3 And Bi0.8ca0.2feo3 Films

Mechanism of Ferroelectric Resistive Switching in Bi0.9la0.1feo3 Thin Films

Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Polarization-switching Pathway Determined Electrical Transport Behaviors in Rhombohedral BiFeO3 Thin Films.

Ferroelectric Diode-Like Resistive Switching Behavior in Bi0.95Er0.05FeO3/CuFe2O4 Heterostructures for Non-Volatile Memories

Ferroelectric Domain Switching Dynamics and Memristive Behaviors in BiFeO3-based Magnetoelectric Heterojunctions

Spatially Resolved Polarization Switching Near a Planar Defect by Design: Mesoscopic Mechanisms at Tilt Grain Boundary in Bismuth Ferrite