Ferroelectric Domain Switching Dynamics and Memristive Behaviors in BiFeO3-based Magnetoelectric Heterojunctions

Weichuan Huang,Yukuai Liu,Zhen Luo,Chuangming Hou,Wenbo Zhao,Yuewei Yin,Xiaoguang Li

DOI: https://doi.org/10.1088/1361-6463/aac04a

2018-01-01

Abstract:The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, similar to 150nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be nonvolatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of similar to 20 V. By reducing the thickness of BFO, the La(0.6)Sr(0.4)Mno(3)/BFO (similar to 5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (similar to 4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.