Switching of ferrotoroidal domains via an intermediate mixed state in the multiferroic Y-type hexaferrite Ba$_{0.5}$Sr$_{1.5}$Mg$_2$Fe$_{12}$O$_{22}$

Jiahao Chen,Francis Chmiel,Jieyi Liu,Dharmalingam Prabhakaran,Paolo G. Radaelli,Roger D. Johnson
2023-12-12
Abstract:We report a detailed study of the magnetic field switching of ferrotoroidal/multiferroic domains in the Y-type hexaferrite compound Ba$_{0.5}$Sr$_{1.5}$Mg$_2$Fe$_{12}$O$_{22}$. By combining data from SQUID magnetometry, magneto-current measurements, and resonant X-ray scattering experiments, we arrive at a complete description of the deterministic switching, which involves the formation of a temperature-dependent mixed state in low magnetic fields. This mechanism is likely to be shared by other members of the hexaferrite family, and presents a challenge for the development of high-speed read-write memory devices based on these materials.
Strongly Correlated Electrons
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the phenomenon of the intermediate mixed state that occurs when ferrotoroidal domains are switched by a magnetic field in the multiferroic material Y - type hexagonal ferrite Ba_0.5Sr_1.5Mg_2Fe_12O_22. Specifically, the researchers combined the data from SQUID magnetometer measurements, magnetic current measurements, and resonant X - ray scattering experiments in order to fully describe the temperature - dependent mixed state formed under a low magnetic field and explore the impact of this mechanism on the development of high - speed read - write storage devices based on such materials. ### Research Background The paper first introduced that the use of the inherent functions in magnetoelectric (ME) and multiferroic (MF) materials, where (anti) ferromagnetic order can be controlled by an electric field and vice versa, ferroelectric order can be controlled by a magnetic field, may promote the development of high - speed, low - energy - consumption magnetic storage devices. It specifically mentioned that some "type - II" multiferroic materials in the hexagonal ferrite family have attracted much attention due to their remarkable electrode polarization characteristics, and these materials may be integrated into multiferroic storage devices provided that their ordering temperature can be increased above room temperature. Y - type hexagonal ferrite Ba_0.5Sr_1.5Mg_2Fe_12O_22 (BSMFO) has a complex magnetic structure and can be switched under a very low magnetic field, which makes it an ideal material for studying the switching behavior of ferrotoroidal domains. ### Research Methods and Results The research team used a variety of technical means to explore the switching process of ferrotoroidal domains in BSMFO, including: - **SQUID Magnetometer Measurements**: Used to measure the magnetic - field - dependent magnetization. - **Magnetic Current Measurements**: The change in electrode polarization was determined by measuring the out - of - plane magnetic current. - **Resonant X - ray Scattering (RXMS)**: Provided microscopic evidence regarding the change in magnetic structure. Through these experiments, the researchers found that, under a low magnetic field, there is a temperature - dependent mixed state in BSMFO, and this state consists of the co - existence of the longitudinal conical (LC) phase and the transverse conical (TC) phase. The formation of this mixed state explains some of the previously observed abnormal features, such as the unusual behavior of magnetization, electrode polarization, and RXMS intensity as a function of the magnetic field. ### Conclusions The paper finally provides a comprehensive description that, in BSMFO, the deterministic switching of ferrotoroidal domains is achieved by the simple rotation of the TFTC structure under a unique and controllable sign, and under a low magnetic field, the presence of the LC phase forms a mixed state that can explain all of the observed abnormal features. This finding not only deepens the understanding of the switching mechanism of ferrotoroidal domains in Y - type hexagonal ferrite but also provides an important theoretical basis for the development of high - speed read - write storage devices based on these materials.