Abstract:Abstract The Ge 2 Sb 2 Te 5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge 2 Sb 1 Te 2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge 2 Sb 1 Te 2 and elemental Ge, allowing for a direct comparison with the established Ge 2 Sb 2 Te 5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

Electrical Properties and Structural Transition of Ge2Sb2Te5 Adjusted by Rare-Earth Element Gd for Nonvolatile Phase-Change Memory

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Improved Thermal Stability and Fast Phase Change Speed of Y-doped Sb7Se3 Thin Film for Phase Change Memory Applications

Improved Performances of Ge2sb2te5 Based Phase Change Memory by W Doping

High Thermal Stability and Fast Speed Phase Change Memory by Optimizing GeSbTe with Scandium Doping

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Carbon-doped Ge2Sb2Te5 Phase Change Material: A Candidate for High-Density Phase Change Memory Application

Scandium Doped Ge2Sb2Te5 for High-Speed and Low-Power-consumption Phase Change Memory

Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb<sub>2</sub>Te Thin Films for Phase Change Random Access Memory

Ab initio molecular dynamics and materials design for embedded phase-change memory

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Direct observation of metastable face-centered cubic Sb 2 Te 3 crystal

High performance of Er-doped Sb2Te material used in phase change memory

Effect of dopants on the structure and properties of Ge2Sb2Te5 studied by Ab initio calculations