Abstract:The drawbacks of low thermal stability and high power consumption pose challenges to the application of phase change materials in the automotive industry and in‐memory computing. Numerous studies are conducted to enhance the performance of these materials. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

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Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

High performance of Er-doped Sb2Te material used in phase change memory

Excellent performance Ruthenium doped Sb2Te3 alloy for phase change memory

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Sb-rich Zn–Sb–Te Phase-Change Materials: A Candidate for the Trade-off Between Crystallization Speed and Data Retention

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Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

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Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials

Study of Si-Doped Sb2te3 Films for Phase Change Memory