Abstract:Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component additive was developed: 3-(2-(4,5-dihydrothiazol-2-yl) disulfanyl) propane-1-sulfonic acid/sulfonate (SH110). Sodium 3,3'-dithiodipropane sulfonate (SPS) and SH110 were used as additives for TSV electroplating copper filling. SH110 resulted in void-free filling, whereas large keyhole voids were found for SPS. To understand how the additives affect the filling mechanism, linear sweep voltammetry of the plating solutions was carried out. The interactions between the Cu surface and additives were simulated by molecular dynamics (MD) analysis using Materials Studio software, and quantum chemistry calculations were conducted using GAUSSIAN 09W. SH110 adsorbs to the Cu surface by both 4,5-dihydrothiazole (DHT) and 3-mercaptopropane sulfonate (MPS) moieties, while SPS is adsorbed only by MPS moieties. MD simulations indicated that the adsorption of the coplanar MPS moiety is the main factor governing acceleration. Quantum chemistry calculations showed that DHT provides an inhibitory effect for TSV filling, while MPS acts as an accelerator for SH110. SH110 is an excellent additive exhibiting both the acceleration and the suppression necessary for achieving void-free TSV filling.

Effects of additives with different acids on the through-silicon vias copper filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Wetting Process of Copper Filling in Through Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Effect of Different Pretreatments on Through Silicon Via Copper Filling

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Synergistic Effect of Different Additives on Microvia Filling in an Acidic Copper Plating Solution

Synergistic Effect of Additives on Filling of Tapered TGV Vias by Copper Electroplating

Effect of Pretreatment on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Effect of additives on copper electroplating profile for TSV filling