Abstract:Context: Silicon carbide nanowires (SiCNWs) are considered a promising alternative material for application in lithium-ion batteries, with researchers striving to develop new electrode materials that exhibit high capacity and high charge/discharge rate performance. To gain a deeper understanding of the application of SiCNWs in semiconductor material science and energy supply fields, we investigated the effects of nanoscale and surface lithiation on the electrical and mechanical properties of SiCNWs grown along the [111] direction. First-principles calculation was used to study their geometries, electronic structures, and associated electrochemical properties. Herein, we considered SiCNWs with full hydrogen passivation, full lithium passivation, and mixed passivation at different sizes. The formation energy indicates that the stability of SiCNWs increases with the increasing diameter, and the surface-lithiated SiC nanowires (Li-SiCNWs) are found to be energetically stable. The mixed passivated SiCNWs exhibit the properties of indirect band gap with the increase of lithium atoms on the surface, while the fully lithium passivated nanowires exhibit metallic behavior. Charge analysis shows that a portion of the electrons on the lithium atoms are transferred to the surface atoms of the nanowires and electrons prefer to cluster more near the C atoms. Additionally, Li-SiCNWs still have good mechanical resistance during the lithiation process. The stable open-circuit voltage range and theoretical capacity of these SiCNWs indicate their suitability as anode materials. Method: In this study, Materials Studio 8.0 was used to construct the models of the SiCNWs. And all the density functional theory (DFT) calculations were performed by the Vienna ab initio Simulation Package (VASP). The self-consistent field calculations are performed over a Monkhorst-Pack net of 1 × 1 × 6 k-points. The energy convergence criteria for the self-consistent field calculation were set to 10-5 eV/atom with a cutoff energy of 400 eV.

Effect of surface dangling bonds on transport properties of phosphorous doped SiC nanowires

Discrete Impurity Band from Surface Danging Bonds in Nitrogen and Phosphorus Doped SiC Nanowires

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study*

Inhibition of Quantum Size Effects from Surface Dangling Bonds: the First Principles Study on Different Morphology SiC Nanowires

Surface Defects-Induced P-Type Conduction of Silicon Nanowires

Effects of Hydroxyl Groups and Hydrogen Passivation on the Structure, Electrical and Optical Properties of Silicon Carbide Nanowires

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Transport in Silicon Nanowires: Role of Radial Dopant Profile

Stability, Electronic Structure, and Optical Property of Surface Passivated Silicon Nanowires: Density Functional Calculation

Numerical investigation of the effects of phosphorus on the mechanical responses of [1 1 0]-oriented silicon nano-wires.

Effects of different atomic passivation on conductive and dielectric properties of silicon carbide nanowires

Numerical Investigation Of The Effects Of Phosphorus On The Mechanical Responses Of [110]-Oriented Silicon Nano-Wires

A theoretical study of surface lithium effects on the [111] SiC nanowires as anode materials

Charged impurity scattering and mobility in gated silicon nanowires

Electrical characterization of chemical and dielectric passivation of InAs nanowires