Abstract:A feasible ligand‐pinning‐assisted approach is reported to modulate the nucleation and growth of perovskite quantum dots (PQDs), allowing for size tuning of PQDs and therefore their spectroscopies. Meanwhile, the defective surface matrix of PQDs is effectively repaired, and the stacking orientation of PQD solids is also obviously ameliorated, leading to higher performance of PQD‐light emitting diodes being realized. Perovskite quantum dots (PQDs) show high potential for new‐generation light‐emitting diodes (LEDs) due to their outstanding optoelectronic properties. Even though the red PQD‐LEDs can be realized through mixing halide in the PQDs to tune their spectroscopies, the PQDs may suffer from phase separation under a high electric field, predominantly affecting LED applications. Herein, a ligand‐pinning‐assisted approach is reported to tune the spectroscopies of CsPbI3 PQDs, in which vinyl phosphonic acid (VPA) is applied as function ligands to regulate the nucleation and growth of PQDs during the synthesis. Systematically experimental studies and theoretical calculations are conducted to comprehensively understand the functions of the VPA ligands during the PQD synthesis, which reveals that the VPA ligands with high binding energy with Pb2+ cations could firmly anchor on the surface matrix of PQDs without desorption, regulating the growth of PQDs and thus resulting in tunable spectroscopies being realized. Meanwhile, VPA could also renovate the defective surface matrix of PQDs, substantially diminishing trap‐induced nonradiative recombination. Consequently, red PQD‐LEDs deliver a high external quantum efficiency of 22.83%, which is significantly improved compared with the control devices. This work provides a new avenue to tune the spectroscopies of PQDs toward high‐performing LEDs.

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Efficient silicon quantum dots light emitting diodes with an inverted device structure

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Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport

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All‐Inorganic Perovskite Quantum Dots/p‐Si Heterojunction Light‐Emitting Diodes under DC and AC Driving Modes

In Situ Embedding Synthesis of CsPbBr 3 @Ce-MOF@SiO 2 Nanocomposites for High Efficiency Light-Emitting Diodes: Suppressing Reabsorption Losses through the Waveguiding Effect

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

Ligand‐Pinning Induced Size Modulation of CsPbI3 Perovskite Quantum Dots for Red Light‐Emitting Diodes

Enhancing photoluminescence performance of perovskite quantum dots with plasmonic nanoparticles: insights into mechanisms and light-emitting applications

Highly efficient and stable CsPbBr3 perovskite quantum dots by encapsulation in dual-shell hollow silica spheres for WLEDs

Förster Resonance Energy Transfer and Enhanced Emission in Cs4PbBr6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications

Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

Efficient All‐Perovskite White Light‐Emitting Diodes Made of In Situ Grown Perovskite‐Mesoporous Silica Nanocomposites

PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using P–i–n Structures

Ultrathin, Core-Shell Structured SiO2 Coated Mn2+ -Doped Perovskite Quantum Dots for Bright White Light-Emitting Diodes

Luminescence: Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture (adv. Funct. Mater. 20/2018)

Ions-induced Assembly of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30

Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification.

Formation of Distributed Local Heterojunction to Enhance NIR Emission Due to the Effective Carrier Transfer