Abnormal N-Type Doping Effect in Nitrogen-Doped Tungsten Diselenide Prepared by Moderate Ammonia Plasma Treatment

Zhepeng Jin,Zhi Cai,Xiaosong Chen,Dacheng Wei
DOI: https://doi.org/10.1007/s12274-018-2087-8
IF: 9.9
2018-01-01
Nano Research
Abstract:To facilitate potential applications of tungsten diselenide (WSe2) in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional (2D) materials. However, owing to the strong etching effect in transition metal dichalcogenides (TMDCs), it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical measurements reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.
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