Transparent In-Ga-Zn-O Field Effect Glucose Sensors Fabricated Directly on Highly Curved Substrates

Xiaosong Du,Gregory S. Herman
DOI: https://doi.org/10.1016/j.snb.2018.04.087
2018-01-01
Abstract:Fully transparent electronics are of increasing interest for biological applications, where the combination of sensing and imaging can potentially improve patient healthcare diagnostics. Herein, we report high-performance, fully-transparent amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) based biosensors fabricated directly on highly-curved glass substrates. The a-IGZO channel and indium tin oxide electrodes were patterned directly on glass tubes (1.0 mm radius) by microcontact printing self-assembled monolayers and etching the metal oxide films. This approach led to a-IGZO FETs with excellent electronic performance, with high on/off drain current similar to 1.3x10(6), high average electron mobility > 7.4 cm(2)/Vs, low on/off hysteresis similar to 0.6, V and low gate leakage current similar to 10(-10) A. The back-channel of the a-IGZO FETs were functionalized with glucose oxidase to make fully transparent biosensors with very high sensitivity to glucose. We have determined that the glucose limit of detection is 170 mu M. These results provide insight into new methods for fabricating a-IGZO FETs and a-IGZO FET biosensors on non-planar substrates, and may open a range of new applications, including transparent sensing catheters, flexible active transparent electrode sensing arrays, and integration of FET based biosensors on optical fibers. (c) 2018 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?