IGZO MESFET with enzyme-modified Schottky gate electrode for glucose sensing

Jakub Kaczmarski,Joanna Jankowska-Śliwińska,Michał A. Borysiewicz
DOI: https://doi.org/10.7567/1347-4065/ab1a65
IF: 1.5
2019-05-13
Japanese Journal of Applied Physics
Abstract:We describe the development of a glucose sensor through the immobilization of an enzyme (glucoseoxidase) into the gate of an In–Ga–Zn–O thin film transistor in a MESFET configuration with Ru–Si–Oacting as a Schottky gate electrode. A change in the gate potential, due to a different glucoseconcentration in the buffer solution causes a change in the width of the depletion region, hencemodulating the current in the channel layer. The glucose sensing mechanism of the presented MESFETstructure is discussed using energy band diagrams The sensitivity of the fabricated IGZO MESFETbiosensor evaluated from the slope of the linear ranges: from 0 to 2 mmol l −1 and from 2 to10 mmol l −1 , which cover blood, salivary, sudoriferous and lachrymal glucose concentration inhumans, equal:2.23 μ A mmol −1 l −1 and0.41 μ A mmol −1 l −1 , respectively.
physics, applied
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