Unstable Cracking Behavior in Nanoscale Single Crystal Silicon: Initiation, Unstable Propagation and Arrest

Kai Huang,Takashi Sumigawa,Licheng Guo,Yabin Yan,Takayuki Kitamura
DOI: https://doi.org/10.1016/j.engfracmech.2018.04.014
IF: 5.4
2018-01-01
Engineering Fracture Mechanics
Abstract:The unstable cracking behavior in nanoscale single crystal silicon, including initiation, unstable propagation and arrest, is experimentally observed by using a nanoscale trapezoidal-doublecantilever-beam method. A well-controlled multi-step cracking experiment is designed for accurately estimating both the fracture toughness K-Ic and the arrest toughness K-Ia. The experimental results show that the unstable cracking within a short range of hundreds of nanometers leads to an apparent decrease from K-Ic to K-Ia, i.e., K-Ia, < K-Ic, and produces surprisingly clean crack surfaces with negligible energy dissipation. The specific surface energy of (01 1) cleavage plane in nanoscale single crystal silicon is accurately evaluated as gamma = 1.83 J/m(2). These results provide a fundamental understanding of the unstable cracking behavior in a brittle material at the nanoscale.
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