Low-loss Bent Channel Waveguides in Lithium Niobate Thin Film by Proton Exchange and Dry Etching

Xue Peng Li,Kai Xin Chen,Zhe Feng Hu
DOI: https://doi.org/10.1364/ome.8.001322
2018-01-01
Optical Materials Express
Abstract:We propose and demonstrate an efficient method combining proton exchange with dry etching for the fabrication of low-loss bend channel waveguides in lithium niobate (LN) thin film. Our proposed method introduces the chemical etching caused by F+ ion to increase the etching rate. Our fabricated straight and bent channel waveguides have a trapezoid cross section with a top width of similar to 1.0 mu m, a height of similar to 900 nm, and a slope of similar to 20 degrees with respect to the vertical direction. To the best of our knowledge, this is the largest etching depth but with a small slope reported up to now. Mode intensity distributions and insertion losses were measured at 1.55 mu m wavelength and bending losses were deduced. The results show that our fabricated bent channel waveguide with a radius of 20 mu m can achieve low bending losses of 0.455 dB/90 degrees and 0.488 dB/90 degrees for the fundamental quasi-TE (qTE) and quasi-TM (qTM) modes, respectively. Compared with the fabrication methods reported so far, our method can realize a faster etching rate and a larger etching depth while maintaining a high etching quality. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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