Modulation of Carrier Concentration and Microstructure for High Performance Bi X Sb 2-X Te 3 Thermoelectrics Prepared by Rapid Solidification

Rigui Deng,Xianli Su,Tingting Luo,Junjie Li,Wei Liu,Yonggao Yan,Xinfeng Tang
DOI: https://doi.org/10.1016/j.jssc.2018.04.038
IF: 3.3
2018-01-01
Journal of Solid State Chemistry
Abstract:In this study, a series of BixSb2-xTe3 were prepared by vacuum melting, melt spinning combined with the plasma activated sintering (SPS) process. The influence of Bi/Sb ratio on the phase composition and thermoelectric properties were systematically discussed. The carrier concentration increases gradually with the increasing Sb content. Due to the optimized carrier concentration while preserving high Seebeck coefficient through adjusting Bi/Sb ratio, Bi0.46Sb1.54Te3 sample obtains the highest power factor of 3.90 mW m(-1) K-2 at room temperature. Moreover, the microstructure is effectively modified by adjusting the linear speed of the copper roller, where the average grains size decreases gradually with the increasing speed of melting spinning (MS). The sample synthesized with the MS speed of 20 m/s possesses the widest distribution of grains size spanning from several nanometer to tens of micrometer, which scatters the phonons with wider range of mean free paths, resulting in the lowest lattice thermal conductivity of 0.64 W m(-1) K-1 at 350 K. Benefitting from the decreased lattice thermal conductivity and enhanced power factor, a peak ZT value of around 1.2 is obtained at 350 K for the Bi0.46Sb1.54Te3 specimen with the MS speed of 20 m/s.
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