Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Low-frequency Electrical Fluctuations in Metal–nanowire–metal Phototransistors

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Low-frequency noise in narrow channel MOSFETs

The Study of Electron Mobility on Ultra-scaled Silicon Nanosheet FET

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Low-Field Mobility and Carrier Transport Mechanism Transition in Nanoscale Mosfets