Abstract:The coherent developments of high performance broadband photodetection and a discrimination technique are highly essential for multiscene imaging and optical communication applications. The integration of traditional bandpass filters or stacking other spectral absorber in photodetectors often complicates the device design and leads to asymmetric photogain for each waveband. Herein, we report on ultraviolet-visible (UV-vis) multispectral photodetection based on a single ZnO nanowire (NW) phototransistor, where defect reconstructions can be reliably induced by a two-step annealing that leads to the observed broadband photodetection. Electron paramagnetic resonance and photoluminescence spectra reveal the reconstructions of zinc-atom-related defects (i.e., zinc interstitials and vacancies). Combined microdifferential reflectance and multimode scanning probe microscope (SPM) technique confirm the presence of a unique visible-sensitive Zn-rich ZnO shell layer and a trap-free UV-sensitive ZnO core. We achieve not only an ultrahigh carrier mobility (212.4 cm(2) V-1 s(-1)), but also a concurrent improvement for UV-vis photodetection with superior responsivities and detectivities on the orders of 10(5) AW(-1) and 10(15) Jones at 100 mV, respectively, and response speeds less than one second. Moreover, photocurrents under blue, green, and red stimuli can be selectively switched on/off by tuning the gate stress. These high performances in all figures of merit have opened new routes to tailor intrinsic properties of a single NW for optoelectronic applications.

Low-frequency Electrical Fluctuations in Metal–nanowire–metal Phototransistors

Ultralow-frequency Photocurrent Oscillation in ZnO Nanowires

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Tunable Electronic Properties of ZnO Nanowires and Nanotubes under a Transverse Electric Field

Electronic Transport Through Individual Zno Nanowires

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Charge-Separation Kinetics of Photoexcited Oxygen Vacancies in Zno Nanowire Field-Effect Transistors

Photo-assisted Hysteresis of Electronic Transport for ZnO Nanowire Transistors.

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Unexpected Optical Response of Single Zno Nanowires Probed Using Controllable Electrical Contacts

Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Coulomb Oscillations Of Indium-Doped Zno Nanowire Transistors In A Magnetic Field

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Trapped Charge Dynamics in Inas Nanowires

Defect Reconstruction Triggered Full-Color Photodetection in Single Nanowire Phototransistor

Investigation of the Temperature Dependent Field Emission from Individual ZnO Nanowires for Evidence of Field-Induced Hot Electrons Emission