Electric Field-Induced Resistive Switching, Magnetism, and Photoresponse Modulation in a Pt/Co0.03Zn0.97O/Nb:SrTiO3 Multi-Function Heterostructure

Zhipeng Luo,Ling Pei,Meiya Li,Yongdan Zhu,Shuai Xie,Xiangyang Cheng,Jiaxian Liu,Huaqi Ding,Rui Xiong
DOI: https://doi.org/10.1063/1.5019786
IF: 4
2018-01-01
Applied Physics Letters
Abstract:A Co0.03Zn0.97O (CZO) thin film was epitaxially grown on a Nb doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/CZO/NSTO heterostructure. This device exhibits stable bipolar resistive switching, well retention and endurance, multilevel memories, and a resistance ratio of high resistance state (HRS)/low resistance state (LRS) up to 7 × 105. Under the illumination of a 405 nm laser, the HRS of the device showed distinct photoelectricity with an open-circuit voltage of 0.5 V. A stronger ferromagnetism was observed at the HRS than at the LRS. The above phenomenon is attributable to the accumulation and migration of oxygen vacancies at the interface of CZO/NSTO. Our results demonstrated a pathway towards making multifunctional devices that simultaneously exhibit resistive switching, photoelectricity, and ferromagnetism.
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