A Snapback-Free Reverse Conducting Insulated-Gate Bipolar Transistor With Discontinuous Field-Stop Layer

Gaoqiang Deng,Xiaorong Luo,Jie Wei,Kun Zhou,Linhua Huang,Tao Sun,Qing Liu,Bo Zhang
DOI: https://doi.org/10.1109/TED.2018.2817204
IF: 3.1
2018-01-01
IEEE Transactions on Electron Devices
Abstract:In this paper, a novel reverse conducting insulator gate bipolar transistor (RC-IGBT) with discontinuous field-stop (DFS) layer is proposed and investigated. The DFS increases the distributed resistance near the collector side in the unipolar mode; and thus, eliminates the snapback phenomenon with a reduced half-cell pitch of 60 μm. In the blocking state, the depletion region is pinched off by the...
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