A Snapback-Free Reverse-Conducting IGBT with Multiple Extraction Channels
Institute of Microelectronics of Chinese Academy of Sciences,Lin Xuwei,Li Shun,Huang Yao,Huang Yi,University of Chinese Academy of Sciences
DOI: https://doi.org/10.1007/s43236-021-00347-0
IF: 0.913
2021-01-01
Journal of Power Electronics
Abstract:A novel Reverse-Conducting Insulated Gate Bipolar Transistor (RC-IGBT) with Multiple Extraction Channels (MEC) is proposed and investigated. The MEC is characterized by two transistors NPN1 (N buffer /P barrier /N collector ), NPN2 (N buffer /P float /N poly ) and short R gap in the collector. The P-Collector, N-Collector, polysilicon and R gap are shorted together, thus the NPN1, NPN2 and R gap are parallel with the PNP transistor (P body /N buffer /P collector ). At the forward conduction, the unipolar mode is effectively suppressed by the electron barriers P-barrier (the base of the NPN1) and P-float (the base of the NPN2), thus the snapback effect can be completely eliminated. At the turn-off, the electrons are quickly extracted by three channels of the NPN1, NPN2 and R gap , thus the E off can be remarkably decreased. Results show at the same V on of 2.8 V, the E off of the MEC RC-IGBT is reduced by 20%, 37%, 45% and 59% compared to AB, FPL, DFS and TOC RC-IGBT, respectively. Therefore the excellent trade-off characteristics with snapback free are achieved.