Abstract:The Debye screening length LD is one of the key parameters for the field-effect channel geometry. However, to the best of our knowledge, there are little reports on the experimental estimation of LD. In this study, we have reported our recent observation of in situ surface-enhanced Raman scattering (SERS) mapping during the investigation of the operating organic field-effect transistors. Placing SERS enhancers in different positions of the device can obtain charge and potential information at different locations, which can help to analyze the spatial distribution of charge and quantitatively estimate the Debye screening length. The enhancing factor of Raman intensity that is testified somehow increases exponentially with the external electrical field in both experiments and theoretical calculations. The experimental estimated Debye screening length is from 6.5 to 3.6 nm when the gate voltage changed from −30 to −50 V. This value is larger than the traditional consideration that the Debye screening length is less than 1 nm, which is due to the presence of the light field and the corresponding photogenerated carriers distributed in the whole active layer. Besides, the charge trapping effect of SERS enhancers has been testified to introduce weak error during the accumulation mode with large current density. These conditions have well mimicked the working mode of phototransistors, which is of great significance for optimization of phototransistor performance.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00148?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00148</a>.AFM characterization of pentacene films; line cuts of the GIWAXS images of pentacene; output and transfer characteristic curves of the device; profiles of Ag-15 device Raman shift intensity and the Raman spectra as a function of applied source-drain voltage and gate voltage; profiles of the control device Raman intensity as a function of applied gate voltage and source-drain voltage; normalized SERS enhancement factor (I/I0) as a function of gate voltage; the change of electron cloud distribution (HOMO) of pentacene under an electric field (2.5 × 10–3 a.u) along the long axis direction of pentacene (z direction); variation of resonance Raman activity and charge transfer number with electric field; main performance parameters of the pure pentacene OFET and the Ag-15 device, V(th,back) of devices with different nanoparticle depths; and excited states and corresponding excitation properties of pentacene–Ag18 with larger oscillator strength and excitation wavelength less than or close to 532 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00148/suppl_file/el1c00148_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Effects of source/drain electrode contact length on the photoresponsive properties of organic field-effect transistors

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors

Extracting contact effects in organic field-effect transistors

Organic field-effect transistors with reduced contact resistance

Effects of molecular diffusion length on area-selective growth of organic patterns

Low Contact Resistance Organic Single-Crystal Transistors with Band-Like Transport Based on 2,6-Bis-Phenylethynyl-Anthracene

Phototransistor Properties of Pentacene Organic Transistors with Poly(methyl Methacrylate) Dielectric Layer

Reducing Contact Resistance in Organic Field-Effect Transistors: A Comprehensive Comparison between 2D and Microrod Single Crystals

Investigating the Effect of the Conductivity of the Electron Transportation Layer on the Organic Light-Emitting Diodes

The response of charge transfer properties to electric fields in organic semiconductors: a comprehensive theoretical investigation

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Extrinsic Limiting Factors of Carrier Transport in Organic Field-Effect Transistors

Tunable contact resistance in double-gate organic field-effect transistors

Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

Introducing a Surface-Enhanced-Raman-Scattering Enhancer for Experimental Estimation of the Debye Screening Length in Organic Field-Effect Transistors

Operation voltage and illumination intensity dependent space-charge limited current conductions in vertical organic phototransistors based on CuPc/C60 heterojunction and graphene