Investigation on Electrically-Driven Semiconductor-Metal Transition of Polycrystalline VO2 Thin Films on Two Kinds of Substrates

Deen Gu,Haoxin Qin,Xin Zhou,Shiyang Xu,Yadong Jiang
DOI: https://doi.org/10.1063/1.4998629
IF: 1.697
2018-01-01
AIP Advances
Abstract:Electrical driving is one of frequently-used stimuli for the semiconductor-metal transition (SMT) of VO2. But the driving mechanism is still under debate. We investigated the DC electrically-driven SMT features of polycrystalline VO2 thin films deposited on two kinds of substrates (quartz and silicon) with obviously-different thermal conductivity and the influence of cooling by a thermo electric cooler (TEC) on the SMT of VO2. Interestingly, the SMT doesn’t happen at a high voltage at very start, but at a relatively low one. Moreover, the SMT of VO2 thin films on silicon substrate is completely restrained by cooling through a TEC although the electric field strength across VO2 reaches 1.1×107 V/m. Our findings reveal that the Joule-heating effect plays an important role in the DC electrically-driven SMT of VO2.
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