Terahertz Integrated Device: High-Q Silicon Dielectric Resonators

Jingya Xie,Xi Zhu,Xiaofei Zang,Qingqing Cheng,Lin Chen,Yiming Zhu
DOI: https://doi.org/10.1364/ome.8.000050
2017-01-01
Optical Materials Express
Abstract:We design, fabricate, and characterize the terahertz integrated resonators on the silicon platform. Based on mode analysis and selection, the high-Q feature of resonators made of low-loss high-resistivity Si material is achieved due to the excitation of the whispering gallery mode on waveguide-coupled single-mode racetrack rings and disk cavities. The experimental results demonstrate that the Q-factor can reach up to 2839 at 218.345 GHz, which is significantly improved compared with conventional THz cavities. These high Q-factor integrated resonators can be used as on-chip terahertz ultrasensitive sensors and as terahertz functional integrated circuits.
What problem does this paper attempt to address?