Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Characteristics of InN Epilayers Grown with H-2-assistance

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Growth-dependent Phonon Characteristics in InN Thin Films

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Influence of GaN Buffer Layer for InN Growth

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

Structures and Optical Properties of $\text{h}_{2}^{+}$ -Implanted GaN Epi-Layers

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

In Situ Spectroscopic Ellipsometry in Plasma-Assisted Molecular Beam Epitaxy of Inn under Different Surface Stoichiometries