Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Analysis of the influence of single event effects on the characteristics for SiC power MOSFETs

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comparative Study on Reliability and Application Features of SiC MOSFET

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

The Investigation on Drain-Source On-State Resistance of SiC Power MOSFETs from Single Event Effects Experiment

Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance

A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility

A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs

SINGLE EVENT EFFECT CHARACTERISTICS ANALYSIS OF TYPICAL CIRCUIT ELEMENTS IN SPACECRAFT POWER SYSTEMS

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Study of heavy ion induced single event gate rupture effect in SiC MOSFETs

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

A Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Simulation Study on Single-Event Burnout Reliability of 4H-Sic Trench Gate MOSFET with Combined P-buried Layer