Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer
Haibin Wang,Jianghao Gu,Xiaofeng Huang,Jingchao Zhang,Yahui Jing
DOI: https://doi.org/10.1016/j.microrel.2024.115344
IF: 1.6
2024-02-22
Microelectronics Reliability
Abstract:With the rapid development of SiC materials, high-power devices such as SiC MOSFETs have been widely used in aerospace, new energy, nuclear applications, and other fields. This places higher demands on their reliability, especially about radiation effects. This paper proposes a 4H-SiC staircase-like buffer layer MOSFET (SBL-MOSFET) with a hardened structure against single-event burnout (SEB). A comparison is made with conventional VD-MOSFET, gauss buffer layer MOSFET (GBL-MOSFET), and double buffer layer MOSFET (DBL-MOSFET) through TCAD simulations. The performance of the SBL-MOSFET against single-event burnout is studied by investigating the electric field distribution, impact ionization rate, hole concentration, and lattice temperature. The simulation results demonstrate that the staircase-like buffer layer structure effectively improves the distribution of high electric field, reduces the impact ionization rate, and thus increases the SEB threshold voltage compared to other structures. The proposed SBL-MOSFET exhibits a 67.5 % improvement in single-event burnout threshold voltage compared to the conventional VD-MOSFET, with slight degradation of breakdown voltage and leakage current. Meanwhile, there is no significant change in other electrical parameters.
engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied