Abstract:The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Control of Ge island coalescence for the formation of nanowires on silicon.

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Germanium crystals on silicon show their light

Composition of nanometer-scaled self-assembled SiGe islands

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands