A Simple Synthesis of Ga2O3 and GaN Nanocrystals

Erwei Huang,Juxia Li,Guangjun Wu,Weili Dai,Naijia Guan,Landong Li

DOI: https://doi.org/10.1039/c7ra10639d

IF: 4.036

2017-01-01

RSC Advances

Abstract:A simple top-down strategy to α-Ga2O3 and GaN nanocrystals is developed and the morphology-dependent optical properties of α-Ga2O3 crystals are established.

What problem does this paper attempt to address?

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

J.C. Wang,D.P. Yu,C.Y. Li,J.F. Zhou,Y.Z. Wang,S.Q. Feng

DOI: https://doi.org/10.1007/s00339-002-2042-z

2004-01-01

Applied Physics A

Abstract:Large-scale synthesis of high-quality GaN nano-crystallites has been achieved by direct reaction of a 4:1 molar Ga/Ga2O3 mixture with ammonia at 950 °C. X-ray diffraction, transmission electron microscopy, selected-area electron diffraction and high-resolution transmission electron microscopy revealed that the produced GaN nanocrystallites were single hexagonal wurtzite structure with an average particle size around 45 nm. A sharp near band edge emission peak and a blue light emission peak were observed in photoluminescence spectroscopy. The synthesis approach is simple and easy to be commercialized.
From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Yuqing Wang,Ruzhi Wang,Yujie Li,Yuefei Zhang,Mankang Zhu,Biben Wang,Hui Yan

DOI: https://doi.org/10.1039/c2ce26555a

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Gallium nitride nanowires (GaN NWs) were successfully grown on silicon substrates deposited with a thin gold film by plasma-assisted hot filament chemical vapor deposition (CVD), where GaN powder was used as the Ga source and nitrogen and hydrogen gases were used for the reactive gases. The diameters of synthesized GaN NWs are in a range of 40-150 nm and the lengths of some of the NWs are up to over 10 mu m. The GaN NWs crystallize in a wurtzite structure and they are grown in alignment or bending modes depending on the growth conditions. The photoluminescence spectra exhibit five emission bands at about 379, 396, 467, 481 and 491 nm, which are related to the band edge emission, defects and impurities of GaN NWs, respectively. Furthermore, the excellent field emission (FE) properties of GaN NWs were observed, and the FE results reveal that the GaN NWs have a low turn-on field of 1.66 V mu m(-1). It supplies a simple strategy to prepare GaN NW films for optical and electrical applications.
Synthesis And Characterizaton Of High-Quality Gan Nanorods With Triangular Cross Section

Xia Wu,Jijiang Fu,Yang Yang,Qingsheng Wu,Zheng Hu,Yanfeng Chen,Yinong Lü

DOI: https://doi.org/10.1142/S0217979205031821

2005-01-01

International Journal of Modern Physics B

Abstract:High-quality GaN nanorods with triangular cross section were synthesized via a simple chloride-assisted vapor phase epitaxy method. High-resolution transmission electron microscopic observations show that the synthesized GaN nanorods are single crystal with wurtzite hexagonal structure. Raman and photoluminescence measurements were also carried out to study the optical properties of the as-prepared GaN nanorods, which suggests the potential applications in optoelectronic devices.
Novel Synthesis of Nanocrystalline Gallium Nitride Powder from Gallium(III)-Urea Complex

Yu Qiu,Lian Gao

DOI: https://doi.org/10.1246/cl.2003.774

2003-01-01

Chemistry Letters

Abstract:A novel method is reported for the preparation of wurtzite gallium nitride (GaN) powder with a controlled particle size from nanometer to micron scale, using gallium(Ill)-urea complex as the precursor. The GaN powders as synthesized at various temperatures showed strong and distinct photoluminescence characteristics. The method. developed here may provide a simple, potentially economical way to form other nitride materials with desired performances.
Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Zhao Jun-Wei,Zhang Yue-Fei,Song Xue-Mei,Yan Hui,Wang Ru-Zhi

DOI: https://doi.org/10.7498/aps.63.117702

IF: 0.906

2014-01-01

Acta Physica Sinica

Abstract:Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.
Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods

Xiaohe Liu,Guanzhou Qiu,Yan Zhao,Ning Zhang,Ran Yi

DOI: https://doi.org/10.1016/j.jallcom.2006.08.062

IF: 6.2

2007-07-01

Journal of Alloys and Compounds

Abstract:Single-crystalline gallium oxide hydroxide (α-GaOOH) nanorods could be successfully synthesized in large quantities through a hydrothermal synthetic method using gallium oxide as the gallium source and sodium azide and aqueous hydrazine as both alkaline and complexing reagent. Single-crystalline gallium oxide (α-Ga2O3 and β-Ga2O3) nanorods could be selectively obtained by thermal decomposition method using gallium oxide hydroxide nanorods as the precursor. The phase structures, morphologies and properties of the final products were investigated in detail by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED), fourier transform infrared spectra (FTIR), differential scanning calorimetric analysis (DSC), thermogravimetric analysis (TG), and photoluminescence spectra (PL).

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Synthesis and Optical Properties of Gan/Zno Solid Solution Nanocrystals

Wei-Qiang Han,Zhenxian Liu,Hua-Gen Yu

DOI: https://doi.org/10.1063/1.3428393

IF: 4

2010-01-01

Applied Physics Letters

Abstract:We devised a synthesis route to prepare narrow band gap GaN/ZnO solid solution nanocrystals via nitriding a homogeneous Ga-Zn-O nanoprecursor. The nanocrystals were characterized by several following methods: x-ray diffractometer, transmission electron microscopy, ultraviolet-visible diffuse reflection, and Raman spectroscopy. Here, we can control the composition of nanocrystals by the nitridation temperature. From 550 to 850 °C, the corresponding crystalline size varies from 6.1 to 27 nm. It has been demonstrated that the sample prepared at 650 °C had the narrowest band gap of 2.21 eV. Microstructural investigations show that the (101) surface is the predominantly exposed one for the GaN/ZnO solid solution nanocrystals. We also discuss the influence of chemical disorder based on the Raman spectra acquired.
Two-step synthesis of one-dimensional single crystalline GaN nanowires

Li Yang,Xing Zhang,Ru Huang,Guoyan Zhang,Chengshan Xue

DOI: https://doi.org/10.1016/j.physe.2004.09.003

2005-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Straight and smooth GaN nanowires were synthesized on quartz substrates through the direct reaction of Ga2O3 thin films with flowing ammonia in a horizontal oven without using a template or catalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and photoluminescence (PL) were used to characterize the samples. The straight and smooth cylindrical nanostructures are high quality single crystalline hexagonal wurtzite GaN nanowires with diameters ranging from 5 to 30nm and lengths up to 20μm. The near-band-edge emission peak located at 367nm was observed at room temperature.
Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

zhaoxia bi,rong zhang,weiping li,xusheng wang,shulin gu,bo shen,yi shi,zhiguo liu,youdou zheng

DOI: https://doi.org/10.1360/03yg9006

2003-01-01

Abstract:With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and alpha-Al2O3 substrate, ZnAl2O4/alpha-Al2O3 Complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/alpha-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4degrees. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.
One-Step Hydrothemal Synthesis of Nitrogen Doped β-Ga₂O₃ Nanostructure and Its Optical Properties

Yan Peng,Naisen Yu,Yun Xiang,Juan Liu,Liwei Cao,Shaoying Huang

DOI: https://doi.org/10.1166/jnn.2018.15376

2018-08-01

Abstract:Nitrogen doped β-Ga2O3 nanostructures were synthesized using a simple one-step aqueous approach. The structure and morphology of the nanostructures were characterized. Both the GaOOH precursor and β-Ga2O3 nanostructures showed the rod-like morphology. Meanwhile, the β-Ga2O3 nanostructures were doped with nitrogen, which was proved by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and cathodoluminescence (CL). The results showed nitrogen-doped one-dimensional β-Ga2O3 nanostructures were achieved by in situ doping while maintaining the morphology. Meanwhile, as a straightforward method, the excellent luminescence properties are suitable for application in white-LED phosphors and novel optoelectronic devices.
Formation of Cubic GaN Nanocrystals: A Study of the Thermal Stability of GaP Nanocrystals under Nitrogen

Shanmin Gao,Liying Zhu,Yi Xie,Xiaobo Qian

DOI: https://doi.org/10.1002/ejic.200300383

IF: 2.551

2004-01-01

European Journal of Inorganic Chemistry

Abstract:Cubic GaN nanoparticles and nanorods have been successfully synthesized from the nitridation of nanocrystalline GaP at 500 degreesC for 30 min, by manipulating different heating rates in nitrogen. The results of the thermal stability studies of nanocrystalline GaP under N-2 at different heating rates support the idea that cubic GaN can form from GaP via a N-P metathesis mechanism. The morphology of the cubic GaN can be controlled by variation of the external synthetic para-meters such as the rate of heating. This work shows that it is very simple to synthesize cubic GaN nanoparticles or nanorods and opens a wide route towards detailed studies of the fundamental properties and potential applications of semiconductor nanocrystals. ((C) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2004).
A Simple Method to Synthesize Β-Ga2o3 Nanorods and Their Photoluminescence Properties

J Zhang,ZG Liu,CK Lin,J Lin

DOI: https://doi.org/10.1016/j.jcrysgro.2005.02.060

IF: 1.8

2005-01-01

Journal of Crystal Growth

Abstract:Gallium oxide hydrate (GaOOH) nanorods were prepared through a facile large-scale hydrothermal process from GaCl3–H2O–NaOH solutions under suitable pH conditions. The primary nanoparticles, as crystal nuclei, grew preferentially along the c-axis to become nanorod structures. The aspect ratio of the nanorods could be modulated from 1:7 to 1:15 using the diethyleneglycol (DEG) and water mixed solvent. The pH value variation in water resulted in different nucleation rates, which further resulted in different structures from quadrilateral nanorods to nanorods arrays. Calcination of the GaOOH nanorods at 900°C in air yielded gallium oxide (β-Ga2O3) crystals with a similar morphology. The β-Ga2O3 nanorods had shown a broad blue emission peak at 455nm with an average lifetime of 64ns when excited at 254nm ultraviolet (UV) light at room temperature.
Synthesis and Characterization of GaN Nanocrystallite Solids

郑伟威,郭范,万松明,刘新征,尹屹梅

DOI: https://doi.org/10.3969/j.issn.1000-985x.2003.03.006

2003-01-01

Abstract:GaN nanocrystallite was synthesized by a new reaction of metal Ga and NaNH 2 with appropriate amount of NH 4Cl as mineralizator at 350-450℃,15-50MPa.Synthesized GaN powder was studied by X-ray powder diffraction,transmission electron microscopy,infrared spectra and Raman spectra,etc.The crystal reveals the wurtzite structure,and the average size is 16nm.The lattice parameters are a=0.3215nm, c=0.5223nm.By this method,both the productive efficiency and crystallinity of nanocrystalline GaN are high.A possible synthesis mechanism for nanocrystalline GaN has been proposed.
Synthesis of A Mesoporous Single Crystal Ga2o3 Nanoplate with Improved Photoluminescence and High Sensitivity in Detecting Co

Shicheng Yan,Lijuan Wan,Zhaosheng Li,Yong Zhou,Zhigang Zou

DOI: https://doi.org/10.1039/c0cc01579b

IF: 4.9

2010-01-01

Chemical Communications

Abstract:A new approach is proposed to synthesize a mesoporous single crystal Ga2O3 nanoplate by heating a single crystal nanoplate of GaOOH, which involves an ion exchange between KGaO2 and CH3COOH at room temperature for the formation of GaOOH and pseudomorphic and topotactic phase transformation from GaOOH to Ga2O3.
The Synthesis of High Quality GaN Nanowires by Amomoniating Ga_2O_3 and Metal Ga Mixture

Dapeng Yu

2011-01-01

Abstract:High quality one-dimensional GaN structure was synthesized via Chemical-Vapor-Deposition method with gold film as catalyst by ammoniating Ga2O3 and metal Ga mixture.SEM,XRD and TEM were used to characterize the morphology,the microstructure of the GaN nanowires samples.The optical properties which were studied by measurements of the photoluminescence showed that the samples are high quality GaN nanowires with little defects.By changing the key factors such as the the mixture of Ga source,the temperature,the distance between the Ga and wafers different morphology of GaN nanowires were analyzed.And the growing mechanisms belong to the VLS mode by which the best situations for the syntheses of GaN namowires were obtained.
Low Temperature Solid-State Synthesis of Nanocrystalline Gallium Nitride

Liangbiao Wang,Liang Shi,Qianwen Li,Lulu Si,Yongchun Zhu,Yitai Qian

DOI: https://doi.org/10.1016/j.materresbull.2012.06.027

IF: 5.6

2012-01-01

Materials Research Bulletin

Abstract:Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550°C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800°C in air.
Synthesis of Gallium Oxide Nanowires and Their Electrical Properties

Zijiong Li,Bin Zhao,Ping Liu,Yafei Zhang

DOI: https://doi.org/10.1016/j.mee.2008.03.008

IF: 2.3

2008-01-01

Microelectronic Engineering

Abstract:Gallium oxide (Ga"2O"3) nanowires have been synthesized using a novel method by high-frequency inductive heating in a room temperature environment. Nanowires with high-yield were grown on silicon substrates in less than 3min, using Ga"2O"3/graphite as the source powder. Scanning electron microscopy showed nanowire diameters of 20-40nm and lengths up to several tens of microns, and high-resolution transmission electron microscopy verified the single-crystalline lattice of the nanowires. Electrical properties were investigated by connecting a single Ga"2O"3 nanowire in the field-effect transistor configuration. This demonstration further illustrates the feasibility of an easy and large-scale synthesis of nanomaterials by using high-frequency inductive heating.
Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Zhaoxia Bi,Rong Zhang,Weiping Li,Xusheng Wang,Shulin Gu,Bo Shen,Yi Shi,Zhiguo Liu,Youdou Zheng

DOI: https://doi.org/10.1360/03yg9006

2003-01-01

Abstract:With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.
Ga-Assisted Synthesis and Optical Properties of ZnO Submicron- and Nanotowers

Yao Liang,Xitian Zhang,Li Qin,E. Zhang,Hong Gao,Zhiguo Zhang

DOI: https://doi.org/10.1021/jp064316q

2006-01-01

Abstract:Tower-like ZnO submicron- and nanostructures were synthesized by simply evaporating a mixture of Zn and Ga. Scanning electron microscopy and transmission electron microscopy observations showed that the regular hexagonal tower-like structure is likely to be made up in a layer-by-layer fashion and consist of sheets. According to our experiments, the amount of Ga has a large effect on their morphologies. The growth of such tower-like structures is ascribed to the vapor-solid mechanism. The introduction of Ga hinders the growth of ZnO along the [0001] direction, resulting in the formation of the novel tower-like structures. In addition, the photoluminescence of such structures shows a strong green-light emission.
Morphology-controlled synthesis and structural characterization of ternary AlxGa1−xN nanostructures by chemical vapor deposition

fei chen,xiaohong ji,qinyuan zhang

DOI: https://doi.org/10.1039/c4ce01886a

IF: 3.756

2015-01-01

CrystEngComm

Abstract:Wurtzite aluminum gallium nitride (AlxGa1-xN) nanostructures with manifold morphologies, including nanonails, nanoneedles, nanorods, nanoflowers, nanomultipods and nanotowers, have been fabricated on bare Si (100) substrates by a simple halide chemical vapor deposition process. The detailed morphological and structural characteristics of these nanostructures have been examined by field emission scanning electron microscopy, X-ray diffraction spectroscopy, and transmission electron microscopy. All AlxGa1-xN nanostructures exhibit a hexagonal wurtzite single-phase structure and a preferred orientation along the [0001] direction. The evolution of the various AlxGa1-xN nanostructures has been systematically investigated in terms of the saturation vapor pressure of the precursors by tuning the growth parameters. A vapor-solid growth mechanism combined with the surface diffusion process is responsible for the formation and evolution of the series of nanostructures.

A Simple Synthesis of Ga2O3 and GaN Nanocrystals

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Synthesis And Characterizaton Of High-Quality Gan Nanorods With Triangular Cross Section

Novel Synthesis of Nanocrystalline Gallium Nitride Powder from Gallium(III)-Urea Complex

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods

Synthesis and Optical Properties of Gan/Zno Solid Solution Nanocrystals

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

One-Step Hydrothemal Synthesis of Nitrogen Doped β-Ga₂O₃ Nanostructure and Its Optical Properties

Formation of Cubic GaN Nanocrystals: A Study of the Thermal Stability of GaP Nanocrystals under Nitrogen

A Simple Method to Synthesize Β-Ga2o3 Nanorods and Their Photoluminescence Properties

Synthesis and Characterization of GaN Nanocrystallite Solids

Synthesis of A Mesoporous Single Crystal Ga2o3 Nanoplate with Improved Photoluminescence and High Sensitivity in Detecting Co

The Synthesis of High Quality GaN Nanowires by Amomoniating Ga_2O_3 and Metal Ga Mixture

Low Temperature Solid-State Synthesis of Nanocrystalline Gallium Nitride

Synthesis of Gallium Oxide Nanowires and Their Electrical Properties

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Ga-Assisted Synthesis and Optical Properties of ZnO Submicron- and Nanotowers

Morphology-controlled synthesis and structural characterization of ternary AlxGa1−xN nanostructures by chemical vapor deposition