Abstract:Micro-interconnection copper pillar bumps are being widely used in the packaging areas of memory chip and high performance computer due to their high density, good conductivity and low noise. Studying the interfacial behavior of copper pillar bump is of great significance for understanding its failure mechanism and microstructure evolution in order to improve the reliability of flip chip package. The thermoelectric stress test, in-situ monitor, infrared thermography test, and microstructure analysis method are employed to study the interfacial reaction, life distribution, failure mechanism and their effect factors of Cu/Ni/SnAg1.8/Cu flip chip copper pillar interconnects under 9 groups of thermoelectric stresses including 2104-3104 A/cm2 and 100-150°C. Under thermoelectric stresses, the interfacial reaction of Cu pillar can be divided into three stages:Cu6Sn5 growth and Sn solder exhaustion; the Cu6Sn5 phase transformation, exhaustion and the Cu3Sn phase growth; voids formation and crack propagation. The rate of Cu6Sn5 phase transforming into Cu3Sn phase is positively correlated with the current density. There are four kinds of failure modes including Cu pad consumption, solder complete consumption and transformation into Cu3Sn, Ni plating layer erosion and strip voids. An obvious polar effect is observed during the dissolution of Cu pads on the substrate side and the Ni layer on the Cu pillar side. When Cu pad is located at the cathode, the direction of electron flow is the same as that of the heat flow, and it can accelerate the consumption of Cu pad and the growth of Cu3Sn. When Ni layer serves as the cathode, the electron flow can enhance the consumption of Ni layer. Under 150°C and 2.5104 A/cm2, the local Ni barrier layer is eroded after 2.5 h, which results in the transformation of Cu pillar on the Ni side into (Cux, Niy)6Sn5 and Cu3Sn alloy. The life of Cu pillar interconnection complies well to the 2-parameter Weibull distribution with a shape parameter of 7.78, which is a typical characteristic of cumulative wear-out failure. The results show that the intermitallic growth behavior and failure mechanism at Cu pillar interconnects are significantly accelerated and changed under thermoelectric stresses compared with the scenario under the single high temperature stress.

Copper Pillar Bump Surface Smoothness Simulation Studies in Through-Silicon Via Technology

The Study on the Shaping of Electroplated Copper Pillar Bumping

Research on the Interfacial Reaction and Mechanism of Cu/Sn/Ni Copper Pillar Bump

Research on the Reliability of Cu/Sn Copper Pillar Bump

Influence of Solder Cap Thickness on the Interfacial Reaction in Cu/Sn/Ni Copper Pillar Bump

Effect of Different Material Systems on Interconnection Properties of 30μm Pitch Micro Bumps

Method to Improve the Process Efficiency for Copper Pillar Electroplating

Influence of Bump Diameter on the Growth of Intermetallic Compounds in Cu/Ni/Sn Copper Pillar Bump During Aging Process

A Sn3Ag–CoSn3 Composite Copper Pillar Bump for Three-Dimensional Packaging

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Reliability Study of Fine Pitch Cu-Sn Micro-Bump Structure Electromigration Test by Finite Element Simulation

Interposer Connection Reliability Using Double-Side Solder Bump for Board-Level Vertical Interconnection

Surface protrusion induced by inter-diffusion on Cu-Sn micro-pillars

Investigation on Solid State Bonding and Intermetallic Compounds Reaction of Cu Pillar Bump/ni Micro Cones

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

A Study on Improvement and Extension of Fine-Pitch Micro-Bump Interconnects Technology: New Metallurgy & Flux-Less Oxide-removal Laser Assembly (FLOLA)

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Interfacial reaction and failure mechanism of Cu/Ni/SnAg1.8/Cu flip chip Cu pillar bump under thermoelectric stresses

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Cu Pillar Electroplating Using a Synthetic Polyquaterntum Leveler and Its Coupling Effect on SAC305/Cu Solder Joint Voiding

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching