Abstract:Herein, a competitive ZT of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29 × 1019 cm−3 at room temperature. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3. The Bi2Te3 family has been considered a state‐of‐the‐art thermoelectric material for room‐temperature applications for over half a century. However, scarcity of the material Te has been a persistent issue. Recently, the discovery of n‐type Mg3(Bi, Sb)2‐based materials provides new hope for replacing traditional Bi2Te3, but their thermoelectric properties near room temperature still need improvement for application to practical devices. Herein, a competitive figure of merit of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29×1019 cm−3 at room temperature. Substituting the Mg site with Mn in Mg3.2Bi1.4Sb0.59Se0.01 changes the dominant carrier scattering mechanism from a mixed scattering of acoustic phonons and ionized impurities to acoustic phonon scattering. Mn doping in Mg3.2Bi1.4Sb0.59Se0.01 also enhances the mobility to 180 cm2 V−1 s−1, reduces the thermal conductivity, and significantly increases the quality factor β of the material. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3.

Comparative Studies on Thermoelectric Properties of P-Type Mg2Sn0.75Ge0.25 Doped with Lithium, Sodium, and Gallium

Thermoelectric Performance of Li Doped, P-Type Mg2(Ge,Sn) and Comparison with Mg2(Si,Sn)

The Effect of Charge Carrier and Doping Site on Thermoelectric Properties of Mg2sn0.75ge0.25

Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

Tuning the Carrier Scattering Mechanism to Improve the Thermoelectric Performance of P-Type Mg3Sb1.5Bi0.5-based Material by Ge Doping

Effect of Sb Doping on the Thermoelectric Properties of Mg<sub>2</sub>Si<sub>0.7</sub>Sn<sub>0.3</sub> Solid Solutions

Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Enhanced thermoelectric performance of p -type Mg 3 Sb 2 by lithium doping and its tunability in an anionic framework

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Significantly enhanced thermoelectric properties of p-type Mg3Sb2 via co-doping of Na and Zn

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Enhanced Average Thermoelectric Figure of Merit of p-Type Zintl Phase Mg 2 ZnSb 2 via Zn Vacancy Tuning and Hole Doping

Thermoelectric Properties of Sb-doped Mg2 Si0.59 Sn0.41 Solid Solutions

Significantly enhanced thermoelectric figure of merit of n-type Mg3Sb2-based Zintl phase compounds via co-doped of Mg and Sb site

Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Thermoelectric properties of Sb-doped Mg2Si0.59Sn0.41solid solutions

First-principles Calculations to Investigate Probing the Influence of Mn and Mg Doping Concentration on Electronic Structures and Transport Properties of SnTe Alloys

Electronic structure and transport property of p-type Mg3Sb2 from first-principles study