Development Of A Cmos-Mems Gyroscope Using Pure-Oxide And Symmetric Metal-Oxide Stacking Structures

Cheng-Yu. Ho,Feng-Yu Lee,Weileun Fang
DOI: https://doi.org/10.1109/TRANSDUCERS.2017.7994251
2017-01-01
Abstract:This study exploits the concepts of pure-oxide and symmetric metal-oxide films to design and implement a CMOS-MEMS gyroscope. Features of this approach include: (1) the main structure of gyroscope is formed by the CMOS pure-oxide layers, (2) the drive and sense electrodes are formed by the symmetric metal-oxide stacking layers. Thus, the unwanted after-process deformation due to the thin film residual stresses and the unwanted in-use thermal deformation due to the CTE mismatch of metal-dielectric films are significantly reduced. Preliminary result shows a flat structure (radius of curvature, ROC >= 80mm) with 500 mu mx470 mu m footprint is achieved. Moreover, the angular rate sensitivity is 4 mu V/degrees/s when measured at atmosphere, and can be further improved using vacuum sealing.
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