Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Geometric Valley Hall Effect and Valley Filtering Through a Singular Berry Flux

Nonlinear Valley Hall Effect

Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Magnetic Field Induced Valley-Polarized Quantum Anomalous Hall Effects in Ferromagnetic Van Der Waals Heterostructures

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Quantum Valley Hall effect without Berry curvature

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Concepts of ferrovalley material and anomalous valley Hall effect

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Anomalous Valley Hall Effect in Two-dimensional Valleytronic Materials

Tunneling valley Hall effect induced by coherent geometric phase

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene