Abstract:This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, <inline-formula> <tex-math notation="LaTeX">$\text {AR}\approx 80$ </tex-math></inline-formula> for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-trench etch, and AR > 20 for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-hole etch), with straight sidewalls across a wide range of feature sizes. The challenges of making such structures are overcome by continuously ramping critical parameters of the Bosch DRIE process throughout the process, including the 380-kHz bias power during etch step, the etch/passivation step duration, and the chamber pressure. The masking material capable of enduring the long DRIE process is also discussed; 10-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> wide trenches are etched to a depth of >750-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and >1000-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, respectively, in 1-mm-thick silicon wafers with straight sidewall profiles and flat trench bottoms. Deeper trenches are expected to be etched beyond a 1-mm thick wafer with thicker and/or higher selectivity masking materials. We have also demonstrated etching of circular holes of diameters as small as 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> to a depth of >500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, and potentially with 10–15 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> diameter holes. This advanced DRIE process offers opportunities for applications ranging from through-silicon via in 3-D CMOS integration to emerging micro- and meso-scale microelectromechanical system applications that demand ultra-deep and UHAR DRIE. [2017–0298]

Critical Characteristics During Silicon Deep Etching for Microelectromechanical Systems Application-Based Bosch Process

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Effect of process parameters on sidewall damage in deep silicon etch

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Reduced etch lag and high aspect ratios by deep reactive ion etching (DRIE)

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon

Etch mechanism of an Al2O3 hard mask in the Bosch process

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Modeling and Simulation of Silicon Dry Etching

Study of the Nanometer Scale Polysilicon Micro Structure Etching