Abstract:Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

Low-Temperature Synthesis of Near-Monodisperse Globular MoS2 Nanoparticles with Sulphur Powders

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS2 Growth.

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Solvothermal Synthesis of Nanocrystalline MoS2from MoO3and Elemental Sulfur

Low-Temperature Synthesis of Nearly Monodisperse ZnS Nanospheres Using a Facile Solution-Phase Approach

Controlling Dispersion and Morphology of MoS2 Nanospheres by Hydrothermal Method Using SiO2 As Template

Facile Growth of Well-Dispersed and Ultra-Small MoS2 Nanodots in Ordered Mesoporous Silica Nanoparticles.

Facile Sulfurization under Ambient Condition with Na2S to Fabricate Nanostructured Copper Sulfide

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Low Temperature Synthesis and Characterization of Molybdenum Disulfide Nanotubes and Nanorods

Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Synthesis and characterization of porous nanoparticles of molybdenum sulfide (MoS2) chalcogenide semiconductor prepared by polymerizing-complexing sol–gel method

Large-scale synthesis of ultra-long sodium doped MoS2 nanotubes with high electrocatalytic activity

A General Method for the Large-Scale Synthesis of Uniform Ultrathin Metal Sulphide Nanocrystals

Low-thermal-budget synthesis of monolayer MoS2

One-pot hydrothermal synthesis of MoS2 nanosheets/C hybrid microspheres

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Organic Solvent Based Synthesis of Gold Nanoparticle - Semiconducting 2H-MoS2 Hybrid Nanosheets

Morphologies controllable synthesis of MoS2 by hot-injection method: from quantum dots to nanosheets