Abstract:Monolayer molybdenum disulfide (MoS2) has garnered significant attention owing to its potential applications in electronics and optoelectronics. Nevertheless, existing methods for the chemical vapor deposition growth of MoS2 demand elevated synthesis temperatures and involve transfer procedures, thereby restricting its effectiveness in device manufacturing. In this study, we present the direct growth of 1-in. (∼25 mm) monolayer MoS2 films on SiO2 and other substrates under low-temperature conditions (360 °C). We employed a highly reactive substance, MoO2Cl2, as the molybdenum source for growth, which significantly reduces the growth temperature of MoS2. Simultaneously, a transitional temperature zone was implemented to further lower the growth temperature of MoS2. Experimental results from multiple tests on the produced MoS2 films indicated excellent uniformity and relatively large grain size (∼5 μm) at the low growth temperature, ensuring its promising applicability Furthermore, we fabricated field-effect transistors on the SiO2, achieving a mobility of 14.3 cm2 V−1 s−1 and an Ion/Ioff ratio exceeding 105. Our method offers a versatile approach for the low-temperature growth of MoS2, paving the way for future developments in silicon process-compatible applications.

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