Abstract:A method of making transition metal oxide materials that result in resistive switching properties stable over time and temperature is described. We have developed an ultra low temperature (≤450°C) process for carbonyl ligand modified NiO thin films based on the chemical solution deposition (CSD) for correlated electron random access memory (CeRAM) applications. CeRAMs form the general class of devices that use the electron-electron interaction as the primary mode of operation. These devices are fabricated in the conductive state (born-ON), thus, they do not require electroforming to enter the variable resistance state. Several process parameters such as film stoichiometry, thickness, annealing temperature and ambient have been investigated to optimize CeRAMs properties. We present the coordination number ‘fine tuning’ in NiO ultra thin films via carbonyl ligand doping that regulate the number of oxygen vacancies and the surface excess of metal ions. CeRAMs contrary to just standard NiO based resistive memories use the pure Mott-like charge transfer insulator in which an abrupt metal to insulator transition is the dominant mechanism without the aid of charge trapping vacancies. In our films the effect of the oxygen vacancies are canceled due to the stabilizing effect of the carbonyl based extrinsic ligand. In this paper, detailed process sequence and the extrinsic ligand doping scheme is described in some length. It is shown that complexes formed by the introduction of the extrinsic ligand promote Ni2+ ions to enter the disproportionation reaction Ni2+ + Ni2+→Ni1+ + Ni3+ which is considered to be responsible for the memory mechanism.

Ce-doping Induced Enhancement of Resistive Switching Performance of Pt / NiFe2O4 / Pt Memory Devices

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices

Chemical defect-dependent resistive switching characterization in CeO2 thin films

Cu Doping Effect on the Resistive Switching Behaviors of CoFe2O4 Thin Films

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

Resistive Switching Properties and Physical Mechanism of Cobalt Ferrite Thin Films

Controlling of Resistive Switching and Magnetism Through Cu2+ Ions Substitution in Nickel Ferrite Based Nonvolatile Memory

Enhancement Of Resistive Switching Ratio Induced By Competing Interfacial Oxygen Diffusion In Tantalum Oxide Based Memories With Metal Nitride Electrode

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

Effect of Rare Element Ce Doping Concentration on Resistive Switching of HfO X Film

Enhanced Resistive Switching Performance in Bilayer Pt/TiO2/Co3O4/Pt Memory Device

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Electric Field Induced Manipulation of Resistive and Magnetization Switching in Pt/NiFe1.95Cr0.05O4/Pt Memory Devices

Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

Effect of Nd doping on the resistive switching properties of BiFeO3 thin films

Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping

Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications

Material and Process Optimization of Correlated Electron Random Access Memories