Abstract:Tuning the transport properties of graphene-based devices to achieve better performance is a fascinating but tough challenge. To overcome this challenge, we created one-dimensional nanostructures that resemble chains by symmetrically doping B and N atoms at different positions in armchair graphene nanoribbons (AGNRs) of different widths saturated by H/O atoms. Their transport properties, including band structure, the spatial distribution of eigenstates, the projected density of states (PDOS), and current-voltage (I-V) curve, have been investigated depending on the non-equilibrium Green's function (NEGF) and Density functional theory (DFT) methods. Based on the calculations, the seven-atom-wide armchair graphene nanoribbons (7-AGNRs) have a distinctive negative differential resistance (NDR) effect with a maximum peak-to-valley ratio (PVR) of 3.34 × 10 6 . We speculate that the NDR effect depends on the strength of the coupling between the band structures of the electrodes within the transmission window, and that the degree of overlap between the P z orbitals of the doped atoms and their delocalized big π orbitals is also relevant. Compared to the existing diodes with fully hydrogenated or fluorinated edges, diodes with H/O co-saturated edges have lower start-up voltages and higher currents in the doped case, as well as rectification ratio of up to 4.48 × 10 6 in the range of [1.1 V, 1.4 V]. Our results have great promise for applications in digital and storage devices as well as in novel oscillators and nanoelectronics.

Tuning the I V Characteristic of a Cruciform Diamine Molecular Device by Connected Position and B/N Doping

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Effects Induced by Single and Multiple Dopants on the Transport Properties in Zigzag-Edged Graphene Nanoribbons

Effect of B and N doping on the negative differential resistance in molecular device

The Site Effects Of B Or N Doping On I-V Characteristics Of A Single Pyrene Molecular Device

Electronic transport properties in doped molecular devices

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

Influence of B doping and N doping on structure and electronic properties of graphene

Effects of B and N Doping on Spin Polarized Transport in Graphene Nanoribbons

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Widely tunable carrier mobility of boron nitride-embedded graphene.

Transport properties of Mn-doped/adsorbed zigzag boron nitride nanoribbon based nanodevices

Half-filled Energy Bands Induced Negative Differential Resistance in Nitrogen-Doped Graphene.

Tuning the Electronic and Magnetic Properties in Zigzag Boron Nitride Nanoribbons with Carbon Dopants

A first-principles study on the electronic transport properties of symmetric B/N co-doped armchair graphene nanoribbons with H/O co-saturation

Electronic Transport Properties in Doped C-60 Molecular Devices

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Doping-induced electronic transport properties in tetracene-based molecular device