The Site Effects Of B Or N Doping On I-V Characteristics Of A Single Pyrene Molecular Device

Zhiqiang Fan,Zhenhua Zhang,Ming Qiu,Xiaoqing Deng,Guiping Tang
DOI: https://doi.org/10.1063/1.4745842
IF: 4
2012-01-01
Applied Physics Letters
Abstract:Using the non-equilibrium Green's function method combined with the density functional theory, the electronic transport properties of boron (B) or nitrogen (N) doped pyrene molecular devices are investigated. The results show that effects of B or N doping on I-V characteristics of a single pyrene molecular device are not constant and can be changed by varying doped sites. More importantly, significant negative differential resistance (NDR) behaviors are found in B-doped pyrene molecular devices. The peak-to-valley ratio which is a typical character of NDR behavior is also sensitive to the B doped site. 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745842]
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